1) on-resistance
通态电阻
1.
The Development of Low-voltage Trench Gate Power MOSFETs (Part Ⅰ)——Reducing drain-source on-resistance Rds(on);
沟槽栅低压功率MOSFET的发展(上)——减小漏源通态电阻R_(ds(on))
2) resistance,on-state
导通状态电阻
3) specific on-resistance
导通电阻
1.
This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.
在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
2.
The electrical field peaks and the specific on-resistance have been discussed in details.
研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。
3.
8%,and the specific on-resistance is reduced by 87.
用半导体专业软件Tsuprem4和Medici模拟证明了该模型十分有效,根据该模型优化得到的新型LDMOS的击穿电压和导通电阻分别比常规LD MOS增加58。
5) On-Resistance
导通电阻
1.
In this paper,the working principle of VDMOSFET and the composition of on-resistance are described.
介绍了VDMOSFET工作原理和VDMOSFET导通电阻的组成。
2.
To overcome the trade-off relationship between the on-resistance and breakdown-voltage of conventional MOS power devices,a new device concept called as "superjunction" or "CoolMOS" has been proposed.
为了克服传统功率MOS导通电阻与击穿电压之间的矛盾,提出了一种新的理想器件结构,称为超级结器件或CoolMOS,CoolMOS由一系列的P型和N型半导体薄层交替排列组成。
3.
By using basic physical equation of semiconductor,such as Poisson equation,a new method to establish an exact on-resistance model based on the physical structure of VDMOS device was given.
导通电阻是衡量VDMOS器件性能的重要参数之一,是高开关效率,低功耗VDMOS器件的主要设计指标。
6) on-state resistance
导通电阻
1.
Compared to VDMOS under the same condition,the on-state resistance is reduced by 19%-43%.
8S、阈值电压2~3V、导通电阻比同样条件的VDMOS降低了19%~43%,在175MHz、VDS=12V下输出功率PO为7W、漏极效率ηD为44%、功率增益GP为10dB。
2.
A conventional RESURF LDMOS could not be possessed of a high off-state breakdown voltage while achieving a low on-state resistance.
RESURF LDM O S很难兼顾击穿电压和导通电阻对结构的要求。
3.
The effects of wideness P w and P T on special on-state resistance R onA are discussed in detail.
介绍了功率VDMOSFET导通电阻的模型,重点讨论了PW与PT对特征导通电阻RonA的影响,经过大量的理论计算,给出了击穿电压为500V,TOX与RonA的关系曲线。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条