1) magnon lifetime
磁振子寿命
2) vibration life
耐振寿命
3) neutron lifetime
中子寿命
1.
Through analysis and research on the principle of neutron lifetime logging, the factors which affect the accuracy and technique are dec-scribed in detail in this paper.
本文通过对中子寿命测井原理进行细致分析研究,从中探寻影响其准确度的因素;并详细描述了中子寿命测井工艺方法,在此基础上针对生产实际情况优选硼中子寿命测井,开展了油层的剩余油饱和度确定、堵水压裂层位确定、管外窜槽检测等方面的应用,在实际生产中取得了较好的应用效果。
2.
Gadolinium neutron lifetime logging (GNLL) is a new technique used for detecting reservoir performance, which is developed by the improvement of boron neutron logging.
钆中子寿命测井是在硼中子寿命测井改进中发展起来的一种油藏动态监测新技术,采用“测-渗-测”方式,通过向地层渗入钆溶液改变井筒附近地层水的俘获截面获取地层剩余油信息。
3.
With proper designs of tool configuration,neutron burst sequence,as well as acquisition of energy and time spectra of gamma ray,an integrated pulsed-neutron gamma ray logging tool,which involves carbon/oxygen logging,neutron lifetime logging and oxygen activation logging,is constructed.
通过恰当地设计测井仪结构、中子发射时序以及能谱和时间谱采集方式,可以构成集碳氧比、中子寿命、氧活化3项功能于一体的脉冲中子伽马综合测井仪。
4) Neutron lifetime logging
中子寿命
1.
Boron-injected neutron lifetime logging thchnology for evaluating cement channeling;
应用注硼(钆)中子寿命测井技术评价管外窜槽
2.
By applying Gadolinium-injected Neutron lifetime logging Technology and according to region characteristic,the multilevel logging-injecting-logging technique have developed,the law of imbibitions and diffusion is summarized and optimal logging time is determined.
采用注钆—中子寿命测井技术 ,根据区块特征开展多级“测—注—测”工艺研究 ,总结出钆酸渗吸扩散规律 ,确定最佳测井时间 ,根据区块油藏情况优化解释模型及参数 ,并结合油藏动、静态资料进行综合评价。
5) Minority carrier lifetime
少子寿命
1.
The minority carrier lifetime(τ) scan mapping along the multicrystalline ingot was obtained by means of Microwave Photo Conductive Decay (μ-PCD).
应用微波光电导衰减仪(μ-PCD)测得了铸造多晶硅硅锭沿生长方向少子寿命的分布图。
2.
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
3.
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法 (PCD)研究了热氧化钝化对直拉硅少子寿命的影响 。
6) carrier lifetime
少子寿命
1.
Oxygen and carbon behavior and minority-carrier lifetimes in multicrystalline silicon(mc-Si) were investigated by means of FTIR and QSSPCD after three step annealing.
对多晶硅片进行三步退火处理,用傅里叶红外光谱仪(FTIR)和准稳态光电导衰减法(QSSPCD)测硅片退火前后氧碳含量及少子寿命,并对单晶硅片做同样处理进行比较。
2.
Through the investigation for variations of minor carrier lifetime before and after light irradiation and annealing and the correlation between light degradation and boron and oxygen concentrations, it was clarified that boron and interstitial oxygen were major components of defect center for light degradation of Bdoped cSi solar cells.
通过光照及退火处理前后少子寿命变化的研究以及光衰减与硼和氧浓度关系的研究,表明引起掺硼晶硅太阳电池光照衰减的主要因素是硼和间隙氧的存在。
补充资料：点振子振动和点电极振子振动
分子式：
CAS号：
性质：又称点振子振动和点电极振子振动。振动能量绝大部分集中在点电极范围内，形成“能量封闭”的振动模式。振子电极面远小于压电陶瓷片的总面积，且与厚度有适宜的匹配关系。在交变电场作用下，沿厚度方向产生振动，其振幅随着至电极中心距离的增加，呈指数式衰减。谐振频率与压电陶瓷片的厚度有关。为提高频率通常将压电陶瓷片磨得很薄，有时考虑到压电陶瓷自身强度太低，可用特制的陶瓷片作垫片来防止压电陶瓷片损坏。常用于高频场合。
CAS号：
性质：又称点振子振动和点电极振子振动。振动能量绝大部分集中在点电极范围内，形成“能量封闭”的振动模式。振子电极面远小于压电陶瓷片的总面积，且与厚度有适宜的匹配关系。在交变电场作用下，沿厚度方向产生振动，其振幅随着至电极中心距离的增加，呈指数式衰减。谐振频率与压电陶瓷片的厚度有关。为提高频率通常将压电陶瓷片磨得很薄，有时考虑到压电陶瓷自身强度太低，可用特制的陶瓷片作垫片来防止压电陶瓷片损坏。常用于高频场合。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条