1) Ta2O5 film
Ta2O5薄膜
2) ZrO2-Ta2O5 composite thin film
ZrO2-Ta2O5复合薄膜
3) Ta_2O_5 dielectric film
Ta2O5介质膜
1.
Forming process of anodic Ta_2O_5 dielectric film of wet tantalum electrolytic capacitors was analyzed,and the microprocess of electrolyte sparking and the oxide film breakdown were studied.
叙述了钽电解电容器阳极Ta2O5介质膜的形成过程,分析了电解液闪火与氧化膜击穿的微观过程。
4) Ta2O5 dielectric films
Ta2O5绝缘膜
1.
The resisitant breakdown voltage is strong as oxidation voltage is between 125 and 150V in which Ta2O5 dielectric films are fabricated.
利用XRD、EDS和AFM分析薄膜的组织结构和表面形貌,超高阻微电流测试仪测试Ta2O5绝缘膜漏电流特性和耐击穿电压,结果表明,磷酸电解液中添加适当乙二醇溶液能有效地防止"晶化",阳极氧化电压在125～150V范围内制备Ta2O5绝缘膜耐击穿电压能力强,经350℃/60min大气气氛下热处理Ta2O5薄膜,内部结构致密,能有效提高Ta2O5绝缘膜耐击穿电压。
5) SrTiO_3/Ta_2O_5 stacked layer
SrTiO3/Ta2O5复合膜
6) Ta_2O_5
Ta2O5
1.
Ta_2O_5 is a kind of important dielectric material and optical waveguide material.
Ta2O5是重要的介电材料和光波导材料。
2.
The solid material H_3PW_ 12O_ 40/Ta_2O_5 was prepared by the sol-gel and wet impregnation method.
采用溶胶-凝胶法制备了半导体型金属氧化物Ta2O5,并通过浸渍法与杂多酸H3PW12O40复合,获得了纳米复合光催化材料H3PW12O40/Ta2O5。
补充资料：arosurf ta 100
CAS: 107-64-2
分子式: C38H80N·Cl
分子量: 551.05
中文名称: N,N-二甲基二-N-1-十八碳氯化胺
英文名称: 1-Octadecanaminium, N,N-dimethyl-N- octadecyl-, chloride；dimethyldioctadecyl-ammoniu chloride；n,n-dimethyl-n-octadecyl-1-octadecanaminiu chloride；aliquat 207；arosurf ta 100；arquad r 40；dimethyldistearylammonium chloride；distearyl dimethylammonium chloride；distearyldimethylammonium chloride
分子式: C38H80N·Cl
分子量: 551.05
中文名称: N,N-二甲基二-N-1-十八碳氯化胺
英文名称: 1-Octadecanaminium, N,N-dimethyl-N- octadecyl-, chloride；dimethyldioctadecyl-ammoniu chloride；n,n-dimethyl-n-octadecyl-1-octadecanaminiu chloride；aliquat 207；arosurf ta 100；arquad r 40；dimethyldistearylammonium chloride；distearyl dimethylammonium chloride；distearyldimethylammonium chloride
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条