1) conductance response
导纳响应
2) ns time response
纳秒响应
1.
The paper describes the property,principle and realigation of ns time responsed proximity focus image intenfifier.
介绍纳秒响应近贴型像增强器的性能、技术原理及实现ns响应的措施。
3) Strain mobility
应变导纳
4) photoconductive response
光电导响应
1.
The profiles of the stable-antephotoconductive response and the minority carrier lifetime of a narrow band Hg1-xCdxTewere studied.
实验测量了光斑的尺寸，最后用此光学系统研究了窄禁带半导体Ｈｇ１－ｘＣｄｘＴｅ的稳态光电导响应和少子寿命分布。
2.
The uniformity of the stable-state photoconductive response and the transient decay response of Hg1-xCdxTe (MCT) material is studied.
研究了Hg_(1-x)Cd_xTe的稳态光电导响应和瞬态响应的均匀性,用可调谐连续Pb_(1-x)Sn_xTe激光测量稳态光电导,用GaAs/GaAlAs脉冲激光激发瞬态光电导。
5) conductivity response
电导率响应
1.
A comparative analysis of conductivity responses among the Hanai-Bruggeman conductivity model(H-B model),the Archie equation,Waxman-Smith model(W-S model) and the dual-water model has been suggested in this study.
通过对Hanai-Bruggeman电导率模型(H-B模型)与Archie公式、Waxman-Smith模型(W-S模型)和双水模型的电导率响应的对比分析,明确了Archie公式、Waxman-Smith模型的适用条件,总结了H-B电导率模型在高、低矿化度条件下的电导率响应特征。
6) Fast ns time response
快速纳秒响应
补充资料：导纳圆图
见阻抗圆图。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条