1) monolithic integrated three-axis
单片集成三轴
1.
A new monolithic integrated three-axis micromachined gyroscope is designed and tested.
设计了一种单片集成三轴微机械陀螺,制造了一批样机,进行了初步的驱动特性的实验研究,研制结果表明,陀螺性能符合设计要求。
2) signal-axis integrated
单轴集成
3) Monolithic integration
单片集成
1.
The monolithic integration and hybrid integration technology used for HgCdTe infrared detector is researched.
对用于ＨｇＣｄＴｅ红外探测器的单片集成与混合集成技术进行了研究。
2.
Based on a thorough investigation and an analysis of the worldwide research achievements on micro-cantilevers monolithic integration,an integrated sensor system composed of a cantilever array,a digital controlled multiplexer,and an instrumentation amplifier are designed and processed,and intermediate-CMOS process was designed to fabricate the int.
测量的结果证实了我们单片集成的可行性。
3.
Contact-mode photolithography was used for realizing the monolithic integration of 0.
采用光学接触式光刻方式,实现了单片集成0。
4) monolithic integrated
单片集成
1.
AlGaAs/GaAs monolithic integrated laser transmitter;
AlGaAs/GaAs 单片集成激光发射机
2.
Millimeter Wave RF-MEMS Monolithic Integrated 0/π Phase Shifter
毫米波RF-MEMS单片集成0/π移相器
3.
The developing background of the monolithic integrated Si photo-receiver was presented.
介绍了单片集成硅光接收器的研究背景,阐述了硅光电探测器的工作机理。
5) monolithic
[英][,mɔnə'liθik] [美][,mɑnə'lɪθɪk]
单片集成
1.
A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.
介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉。
2.
An optimized design of the monolithic switched capacitor DC-DC converter is presented.
提出了一种针对单片集成开关电容 DC- DC变换器进行优化的设计方案 。
3.
The paper analyzes the possibility, difficulty, the present level and foreground about using CMOS imply the radio frequency (RF) circuit′s monolithic.
本文介绍了用CMOS工艺实现射频电路单片集成的可能性、难点、目前的情况和前景以及最终实现射频IP(IntellectualProperty)的意义 ,并提出了一条适合国内发展射频电路集成的途径。
6) monolithically integrated MEMS
单片集成MEMS
1.
The feasibility and methods of packaging monolithically integrated MEMS by anodic bonding is studied and proved by analysis and experiment.
分析了阳极键合工艺的原理及其工艺条件对CMOS电路的影响,并通过理论分析和实验研究了单片集成MEMS中的两种阳极键合方法:对于玻璃在硅片上方的键合方式,通过在电路部分上方玻璃上腐蚀一定深度的腔及用氮化硅层保护电路可以在很大程度上减轻阳极键合工艺的影响;而玻璃在硅片下方的键合方式,硅片上的电路几乎不受阳极键合工艺的影响,两种方法各有优缺点。
补充资料：单片集成电路
见集成电路工艺。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条