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1)  resistance-temperature coefficient
电阻-温度系数
1.
The influence of sintering process on the resistance-temperature coefficient of BaTiO3-based PTCR ceramics doped with Nb2O5 was investigated, studies revealed that the heating rate、cooling rate、sintering temperature and socking time has great influence on it.
研究了在制备掺杂Nb2O5的BaTiO3基PTC热敏电阻时,烧结工艺对电阻-温度系数的影响。
2)  TCR
电阻温度系数
1.
Study on the Resistivity and TCR of P-doped a-Si∶H Thin Films;
掺磷a-Si∶H红外薄膜电阻率及电阻温度系数研究
2.
Modulation of TCR for VO_2 Thin Film by Changing Preparation Parameters;
利用制备参数的改变调整VO_2薄膜的电阻温度系数
3.
Effect of Oleic-acid on TCR of La_0.7(Ca_0.53Sr_0.47)_0.3MnO_3 Polycrystals Prepared by Chemical Coprecipitation Method;
油酸对化学共沉淀法制备La_0.7(Ca_0.53Sr_0.47)_0.3MnO_3多晶的电阻温度系数的影响
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3)  temperature coefficient of resistance(TCR)
电阻温度系数
1.
The effect of sputtering conditions on temperature coefficient of resistance(TCR) is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.
利用对靶磁控溅射法在玻璃基片上制备VOx薄膜,采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数(TCR)的影响,得到优化的镀膜工艺参数,主要包括Ar∶O2为48∶0。
2.
The temperature coefficient of resistance(TCR) of these samples have been studied.
7)多晶材料,研究了它们的电阻温度系数(TCR)。
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4)  negative temperature coefficient of resistance
负电阻温度系数
5)  resistance temperature coefficient
电阻温度系数
1.
The microstructure of YBCO film was analyzed by XRD and the resistance temperature coefficient(RTC) values, Hall effect and Raman shift.
进行了X射线衍射(XRD)分析 ,电阻温度系数 (RTC)和Hall系数测试 ,并进行Raman散射的微观分析实验 ,认为该半导体薄膜可用作室温工作的红外测辐射热计 (Bolometer)灵敏元 。
2.
It leads to the resistance temperature coefficient is smaller than in bulk.
随着厚度增加,薄膜的电导率,热导率和电阻温度系数都增加。
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6)  temperature coefficient of resistant(TCR)
温度电阻系数TCR
补充资料：铂电阻温度表(见电阻温度表)


铂电阻温度表(见电阻温度表)


表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条