1) valence-band offsets
价带带阶
1.
The valence-band offsets of such systems are calculated by frozen potential method and their Joint density of states has been computed by tetrahedron method.
在此基础上，用冻结势方法计算了该超晶格系统的价带带阶；用四面体方法计算了该系统的联合态密度。
2) valence band discontinuity
价带阶跃
3) band offset
带阶
1.
A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si heterojunction.
Si和 β FeSi2 发光强度的比率对温度的依存性表明同型异质结对电子限制能力的减弱符合热发射模型 ,由此确定出Si和 β FeSi2 异质结导带带阶差为 0 2eV 。
2.
By fitting the experimental datawith a simple calculation, band offset of the GaN 0.
用光荧光谱 (PL )研究了 Ga Nx As1 - x/ Ga As单量子阱 (SQW)的光跃迁性质和带阶 。
3.
The band offsets of InAs/AlSb on GaSb substrate, InAs/Al 0.
4 8As的带阶 ,及其所组成的量子阱在加和不加电场作用下的束缚态 。
4) valence band
价带
1.
Based on the valence band E(k)-k relation of strained Si/(001)Si_(1-x)Ge_x,the hole effective mass along arbitrarily k wavevector direction were obtained.
基于应变Si/(001)Si1-xGex材料价带E(k)-k关系模型,研究获得了其沿不同晶向的空穴有效质量。
5) Fourth-order band-pass
四阶带通
1.
Design of fourth-order band-pass loudspeaker systems based on simulated annealing genetic algorithm;
基于退火遗传算法的四阶带通箱设计
6) blastobelt period
胚带阶段
1.
Observation on the shapes and anatomy of eggs of different days shows that the embryonic development of Orthosia incerta Hufnagel can be divided into three periods, they are blastodisc period,blastobelt period and blastoforming period.
通过对不同时间卵的外形及解剖观察 ,得出梦尼夜蛾 Orthosia incerta Hufnagel的胚胎发育可分为胚盘阶段、胚带阶段以及成形阶段 (成形初期和成形末期 ) ,随胚胎发育程度的不同 ,卵壳颜色也发生相应的规律性变化 ,可作为判断胚胎发育阶段及预测预报的依据。
补充资料：价带
见固体的能带。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条