1) self-heating effect
自加热效应
1.
High-temperature performance influenced by self-heating effect is analyzed.
介绍了SOI材料结构技术用于高温电路的优势,分析了影响高温性能的自加热效应。
2.
From another aspect,theoretical basis is perfectly explained for bringing down self-heating effect.
针对目前常规SOI器件高温特性存在的问题,提出了采用等效电容法分析器件自加热效应的新观点,对抑制自加热效应原理进行了新的解析,根据埋层材料的介电常数不同,按等效电容法进行埋层厚度折算。
3.
By making thermal dissipating paths through the void layer,the self-heating effect is effectively alleviated.
分析了自加热效应对SON器件性能的影响,并与SOI器件进行了比较。
2) heating effect
加热效应
1.
The length of plasma jet was obtained on the basis of digital image processing and the CCD image gathering system, and heating effect was determined through the temperature rising of a substrate in the unit time by an IR pyrometer.
采用CCD图像采集系统与图像处理技术提取等离子射流长度;以红外测温仪检测的单位时间内基体温度变化来衡量加热效应,研究不同熔射距离与射流长度条件下射流和粉末粒子流对基体的加热效应特点。
3) self-heating effect
自热效应
1.
The drain and source on ins ul ator (DSOI) structure was proposed to suppress floating body effects (FBEs) and the severe self-heating effect in SOI devices, which are the main drawbacks of the SOI structure.
严重的自热效应和浮体效应是绝缘体上硅(SOI)器件的主要缺点。
2.
The temperature of chip channel rise in the GaAs MESFET microwave power amplifier which acts as pulse working state is sharp as the reason of self-heating effect.
GaAsMESFET微波功率放大器工作在脉冲周期状态下,由于自热效应,在很短的时间内(100μs数量级),芯片沟道温度可能产生十几度甚至几十度的变化,这种剧烈的温度变化导致功放性能的变化也是不能忽略的。
3.
Aiming at two main problems of SOI device——the low vertical breakdown voltage and self-heating effect——a novel SOI high-voltage power device with a variable-k dielectric layer (VkD) is proposed.
针对常规SOI器件纵向耐压低和自热效应两个主要问题,提出了变k介质埋层SOI(variablekdielectricburiedlayerSOI,VkDSOI)高压功率器件新结构。
4) self heating effect
自热效应
1.
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
模拟和测量的结果证明 DSOI器件与 SOI器件相比 ,具有衬底热阻较低的优点 ,因而 DSOI器件在保持 SOI器件电学特性优势的同时消除了 SOI器件严重的自热效应 。
5) self-heating
自热效应
1.
Based on the DC model and the self-heating model of SiC MESFETs,the self-heating effect is investigated in detail.
针对4H-SiC射频MESFET中的自热效应,建立了基于解析模型的材料参数温度模型和器件直流模型。
2.
The impact of self-heating effect on AlGaN/GaN HEMTs grown on sapphire substrate is analyzed in detail.
建立了包含“自热效应”的A lG aN/G aN HEM T(高电子迁移率晶体管)直流I-V特性解析模型。
6) self-heating effects
自热效应
1.
In this work, the real bandgap narrowing is distributed between the conduction and valence bands according to Jain-Roulston model, and its effects on the output of the currents of AlGaAs/GaAs HBT including self-heating effects is analysi.
本文基于 Jain-Roulston禁带收缩模型及热场发射——扩散载流子输运机制 ,对考虑自热效应下的重掺杂 Al Ga As/Ga-As HBT电流特性进行了深入的研究。
补充资料：自调自净自度
【自调自净自度】
（术语）同自调项。
（术语）同自调项。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条