1) germania concentration
掺锗浓度
2) doping concentration
掺杂浓度
1.
Measurement of doping concentration in strained Si_(1-x) Ge_x with four-probe array;
四探针法测量应变Si_(1-x)Ge_x掺杂浓度
2.
The electroluminescence spectra of devices with different doping concentration are detected under different driving current densities.
分别以PtOEP掺杂和未掺杂的Alq3膜作为发光层制作有机发光器件(OLED),改变掺杂浓度,检测器件电致发光(EL)光谱的变化。
3.
Based on rate equations,changing doping concentration and cladding size of the Er3+/Yb3+ co-doped double-cladding fiber laser,the effect of the doping concentration and cladding sizeon the performance of the Er3+/Yb3+ co-doped double-cladding fiber laser was studied.
为了研究掺杂浓度、包层尺寸对双包层Er3+/Yb3+共掺光纤激光器的影响,根据双包层Er3+/Yb3+共掺光纤激光器产生激光的机理,基于速率方程,采用改变Er3+,Yb3+掺杂浓度、内包层尺寸等光纤参数的方法,得到了双包层Er3+/Yb3+共掺光纤激光器随光纤参数变化的特征结果。
4) Doped concentration
掺杂浓度
1.
53 μm photoluminescence intensity,doped concentration,and pump power were numerically simulated for Yb-Er co-doped .
考虑两级合作上转换、激发态吸收和交叉弛豫等非线性效应,建立了镱铒共掺氧化铝材料体系的八个能级的速率方程,唯象地构造了合作上转换、激发态吸收、交叉弛豫等系数随镱铒掺杂浓度的变化函数,数值模拟了Yb∶Er∶Al2O3材料1。
2.
By taking account of the loss of cavity as a function of the Nd 3+ doped concentration, a new expressions of the laser output power and the slope efficiency as a function of the doped concentration are obtained, which are coincident with the experimental results quite well.
通过对 Nd:YVO4晶体吸收特性的研究 ,对全固态 Nd:YVO4激光器中晶体的 Nd3 + 掺杂浓度在强光抽运条件下对激光输出特性的影响进行了分析 ,得出了激光器的输出功率和斜效率与晶体掺杂浓度的对应关系。
3.
% doped concentration,and a output coupler with radius of 30mm,were chosen in this experiment,and 456nm laser threshold was realized at 0.
实验中采用标称输出功率为3W的LD,端面抽运掺杂浓度为0。
5) doping density
掺杂浓度
1.
By using MATLAB software, the authors carry out simulation computation and optimization; and study in a deep-going way the effect of the change of doping density and external bias voltage on frequency and amplitude of self-sustained oscillation of doped GaAs/AlAs superlattice with weak coupling.
运用MATLAB软件进行模拟计算和优化,深入研究掺杂浓度和外加偏压的变化,对GaAs/AlAs掺杂弱耦合超晶格自维持振荡频率和振幅的影响。
2.
The research results indicate that with the increase of doping density in channel,the hot carrier effect immunity becomes better.
基于流体动力学能量输运模型 ,利用二维仿真软件 Medici研究了深亚微米槽栅 PMOS器件衬底和沟道掺杂浓度对器件抗热载流子特性的影响 ,并从器件内部物理机理上对研究结果进行了解释。
3.
The method to deal with doping density for t he simulation of semiconductor devices was discussed.
讨论了半导体器件模拟计算中的掺杂浓度处理方法，比较了Ｆｏｒｔｒａｎ与Ｍａｔｌａｂ两种计算，指出利用Ｍａｔｌａｂ可以避免复杂繁琐的编程，而且调整极为方便。
6) doped Ce concentration
掺铈浓度
补充资料：掺掺
1.女手纤美貌。
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参考词条