1) p-i junction
p-i结
1.
a-SiC_x film with B-doped p-i junction structure was deposited by plasma enhanced chemical vapor deposition(PECVD) on ITO transparent conductive glass with the film as an anode,then an Al film,as a cathode,was sputtered,which consisted of a sandwich structure,and its I-V and light emitting characteristics were studied.
在以ITO薄膜为正极的透明导电玻璃上,利用PECVD方法进行B掺杂制备出具有p-i结的a-SiCx:H薄膜,然后在其上溅Al作为负电极形成“三明治”器件结构,并对它的I-V特性和发光特性进行了研究。
3) p-i-n structure
p-i-n结构
1.
Ultraviolet Photodetectors Based on GaN with p-i-n structure;
GaN基p-i-n结构紫外光探测器
2.
Some technique methods were introduced, such as increasing the crystalline silicon grain size to enhance minority carrier mobility, using surface passivation to reduce numbers of minority carrier recombination centers, designing p-i-n structure to elevate light collection, fabri.
以提高多晶Si薄膜太阳电池转换效率为主线,介绍了增大晶粒尺寸以增加载流子迁移率、进行表面和体内钝化以减少复合中心、设计p-i-n结构以增加光收集效率、制作绒面结构以提高对入射光的吸收效果、改进电池结构以谋求最大效率等工艺措施;综述了近5年来多晶Si薄膜电池在材料生长、结构制备和性能参数方面取得的最新进展,并对其发展前景做了预测。
4) Cu2O/ZnO/ITO p-i-n heterojunction
Cu2O/ ZnO/ITO p-i-n异质结
5) P-I curve
P-I曲线
1.
Three kindsof P-I curve kink from the high-speed LD , w hich c an be able to be displayed in LD test, have been reported and analyzed in this paper.
报告和分析了高速激光器组件中可能出现的3种P-I曲线扭折;指出了在驱动电流20~40mA、光功率0。
6) p/i interface
p/i界面
1.
The effects of deposition time of amorphous silicon-carbide buffer layer at p/i interface on the performance of a-Si:H solar cells have been studied in this paper.
本文研究了pin型非晶硅(a-Si)太阳电池p/i界面掺碳缓冲层(C-buffer layer)沉积时间对电池效率和稳定性的影响。
2.
The effects of deposition time of amorphous silicon-carbide buffer layer at p/i interface on the performance of a-Si solar cells have been studied in this paper.
本文研究了pin型非晶硅(a-si)太阳电池p/i界面掺碳缓冲层(C-buffer layer)沉积时间对电池效率和稳定性的影响。
补充资料：`S_1-I-S_2`隧道结（$S_1-I-S_2$tunneljunction）
`S_1-I-S_2`隧道结（$S_1-I-S_2$tunneljunction）
是指两种不同超导体S1和S2间夹有绝缘介质层I的隧道结，其I-V特性曲线如图。
由于S1和S2不同，Δ1(T)和Δ2(T)也不等。图中Vmax=|Δ2-Δ1|/e，Vmax=(Δ1 Δ2)/e，在这两者之间是负阻区，而V≥Vmax时，隧道电流迅速上升并接近N-I-N的情景。由负电阻特性和电流的极大和极小可测定Δ1和Δ2。但在T=0K时，因没有热激发准粒子，所以只有当V≥(Δ1 Δ1)/e时才发生准粒子隧道效应。对S-I-S隧道结，Δ1=Δ2，其单电子隧道效应的I-V特性曲线类同于S-I-N的I-V曲线形状。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条