1) antimonide semiconductor materials
锑化物材料
2) Sb-based electrode material
锑基材料
3) one-dimensional Sb_2O_3 nanomaterials
准一维氧化锑纳米材料
4) InAsSb materials
铟砷锑材料
5) stibium hydride
锑氢化物
1.
This paper deals with the conditions and chemical properties of stibium hydrides and hydrides of stibium alloy,gas-phase compositions of the fluid inclusions in the deposit,elements contents,mineral coexistance and association,texture and structure.
通过对锑氢化物、锑合金氢化物形成条件和物理化学性质,有关矿床矿物流体包裹体气相成分及有关成矿元素浓度,主要锑矿物化学成分,锑矿物的共生、伴生矿物组合、结构、构造的研究,认为锑氢化物、锑合金氢化物是锑迁移成矿的主要形式。
6) antimonide
['æntimənaid]
锑化物
1.
The paper summarizes the development of antimonide laser and elaborates the material growth,structure design,device pro- cessing,packaging technology and new laser structure.
锑化物激光器在2～5μm波段具有广阔的应用前景。
2.
Quaternary antimonides including single layers and multiple quantum wells for midinfrared lasers and detectors were successfully grown on GaSb substrate by solid source molecular beam epitaxy.
用固态源分子束外延方法，在 ＧａＳｂ衬底上成功地生长出四元系 Ⅲ—Ｖ族锑化物单层、多量子阱和激光器、探测器结构材料，并用这些材料制备了 ２μｍ波段室温准连续奔波导 ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ多量子阱。
3.
The ternary antimonide alloy InAs_(1-x)Sb_x could cover the wavelength ranges of 3～5μm and 8～14μm,where the atmospheric absorption is minimum,by adjusting its solid composition x.
InAs_(1-x)Sb_x和Ga_xIn_(1-x)As_(1-y)Sb_y是两种典型的中红外锑化物半导体材料,前者能够通过调节组分使其禁带宽度值覆盖3～5μm和8～14μm两个大气窗口,而后者能够在与GaSb衬底晶格匹配的条件下,通过组分调节覆盖1。
补充资料：锑化物
金属和锑生成的化合物。自然界有锑银矿等。锑化物可由金属与锑直接化合而得。锑化镁和锑化锌可用于制锑化氢；锑化铟是半导体材料；锑化钠和锑化钾与烷基卤或芳基卤反应，可生成有机锑化物。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条