1) mode field distribution
模场分布
1.
Lightwave transmissions in the special spot size converters with linear and different nonlinear boundaries were simulated and compared with each other,and the transformation of the mode field distribution with the distance in the optical waveguide spot size converter was analysed.
对线性和数种非线性侧面边界的模斑转换器进行了数值仿真和对比 ,分析了平面锥形模斑转换器侧面边界函数对耦合损耗的影响 ,以及模斑转换器中模场分布随传输距离的变化 。
2.
Based on the characteristic of the beam propagation factor of the diffractive beam from the end surface of dielectric planar waveguide,the rationality of the Gaussian approximation for the mode field distribution of planar waveguide TE0 mode is clarified.
基于介质平面光波导端面无受限衍射场光束的光束传输因子的特点,阐明光波导TE0模模场分布采用高斯分布近似表达的合理性。
3.
The features of mode field distribution of semiconductor laser were observed with the analysis of the Gauss beam propagation character and the beam ray-trace method.
结合半导体激光器的特点,通过对高斯光束发散特性的分析,得到激光器的模场分布特点,指出与激光器最佳耦合的光纤外形为楔形光纤,楔形光纤的楔角与尖端半径决定着耦合效率。
2) mode distribution
模场分布
1.
Development of an automatic system for mode distribution measurement of optical waveguides;
光波导模场分布自动检测系统的研制
3) field distribution
模场分布
1.
Mode-matching method with PML for field distribution of waveguide;
波导模场分布采用模式匹配的PML处理方法
4) mode distributions
模场分布
1.
Using a finite element method, cladding-effective-index and effective mode-index are accurately calculated, and mode distributions in different photonic crystal fiber of various wavelength light are given, the results are consistent with the experiments.
通过引入包层有效折射率的概念定义了光子晶体光纤中模式激发的判断条件;使用有限元法精确求得了光子晶体光纤的包层有效折射率和有效模折射率的数值解;给出了不同波长的光在不同结构光子晶体光纤中的模场分布,其结果与实验图样一致。
5) mode field distributions
模场分布
1.
The analysis of mode field distributions of the graded index optical waveguide by the scalar FDTD;
标量FDTD法分析渐变折射率光波导模场分布
6) far-field expression
远场分布模型
1.
Study of far-field expression and distribution properties of laser diode arrays;
半导体激光器阵列的远场分布模型和分布特性研究
补充资料:开关场分布
分子式:
CAS号:
性质:在饱和磁滞回线的微分曲线上,峰值一半处两点之间的宽度称半峰宽ΔH(见图),半峰宽与内禀矫顽力之比称为开关场分布,其表达式为SFD=ΔH/MHc。该值描述磁滞回线在矫顽力附近的陡峭程度。对磁记录材料而言,其值越小,磁滞回线在Hc附近越陡峭,录放信号的灵敏度越高。
CAS号:
性质:在饱和磁滞回线的微分曲线上,峰值一半处两点之间的宽度称半峰宽ΔH(见图),半峰宽与内禀矫顽力之比称为开关场分布,其表达式为SFD=ΔH/MHc。该值描述磁滞回线在矫顽力附近的陡峭程度。对磁记录材料而言,其值越小,磁滞回线在Hc附近越陡峭,录放信号的灵敏度越高。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条