1) TiO2 system varistor ceramics
TiO2系压敏陶瓷
1.
The TiO2 system varistor ceramics were prepared by traditional sintering process.
采用传统电子陶瓷工艺制作了TiO2系压敏陶瓷。
2) TiO2 varistors ceramics
TiO2压敏陶瓷
1.
Influences of sintering temperature and sintering time on microstructures and electrical properties of TiO2 varistors ceramics were investigated.
本文研究了烧结温度和保温时间对TiO2压敏陶瓷微观结构和电学性能的影响;用扫描电子显微镜(SEM)观察了样品的微观形貌;用X射线衍射(XRD)表征了样品的物相、晶体结构。
3) TiO_2-based varistor
TiO2基压敏陶瓷
1.
Influence of SiO_2 on electrical properties of (Sr,Bi,Si,Ta)-added TiO_2-based varistor;
研究SiO2对(Sr,Bi,Si,Ta)掺杂的TiO2基压敏陶瓷的压敏特性、电容特性及晶粒半导化的影响,发现按照配方TiO2+0。
4) TiO2 capacitor-varistor ceramics
TiO2电容-压敏陶瓷
1.
TiO2 capacitor-varistor ceramics is characterized by its excellent nonlinear volt-amppere characteristic and high dielectric constant.
本文综述了TiO2电容-压敏陶瓷性能以及施主杂质、受主杂质、烧结助剂的研究现状,并对其进行了展望。
5) TiO2 based ceramics
TiO2体系陶瓷
6) varistor ceramics
压敏陶瓷
1.
Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling(HEBM) technique under low-temperature sintering,with voltage-gradient(ES) of 1 934~2 197 V/mm,non-linear coefficient(α) of 20.
57 g/cm3的氧化锌压敏陶瓷。
2.
(St,Ba,Ca)TiO_3-based varistor ceramics were prepared by means of conventional solid reaction.
采用常规固相反应法制备(Sr,Ba,Ca)TiO_3基压敏陶瓷,在Mn作为受主掺杂元素,Nb~(5+)离子取代Ti~(4+)离子的前提下,用Dy~(3+)或Nd~(3+)离子取代Sr~(2+)离子,并系统研究掺杂Dy或Nd对(Sr,Ba,Ca)TiO_3基压敏陶瓷性能和结构的影响。
3.
The semiconductor theory about the conduction of zener diode was appled to the TiO_2-SrCO_3-Bi_2O_3-SiO_2-Ta_2O_5 varistor ceramics since it was analogous to two back to back diodes.
压敏陶瓷可视为双向导通的二极管,将适用于齐纳二极管的半导体理论应用于TiO2-SrCO3-Bi2O3-SiO2-Ta2O5压敏陶瓷。
补充资料：负温度系数热敏电阻陶瓷(见热敏陶瓷)
负温度系数热敏电阻陶瓷(见热敏陶瓷)
thermo-sensitive ceramics with negative temperature coefficient
负温度系数热敏电阻陶瓷thermo一sensitiveeeramies with negative temperature eoeffieient在某一特定温度范围，电阻率随温度的升高而明显减小的热敏陶瓷。简称NTC陶瓷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条