1) non-uniform well-thickness
非均匀阱宽
1.
InGaAs/AlGaAs non-uniform well-thickness multi-quantum well superluminescent diodes were designed and successfully fabricated,the output properties of light power and spectrum were measured and analyzed.
采用阳极氧化方法和MBE生长技术进行了非均匀阱宽InGaAs/AlGaAs多量子阱超辐射发光管器件的设计和工艺制作,研究了三种条形结构器件的功率输出和光谱输出特性。
2) non-uniform well-thickness multi-quantum wells
非均匀阱宽多量子阱
1.
In this paper,non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.
为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。
3) inhomogeneous broadening
非均匀加宽
1.
The present paper report the research results on inhomogeneous broadening, fluorescence line narrowing, high temperature persistent spectral hole burning, mechanism of hole burning, hole burning dynamics and thermal stability of spectral holes.
基于光谱烧孔在高密度光存储中的可能应用,研究了谱线非均匀加宽、荧光谱线窄化、高温永久性光谱烧孔、烧孔机理、烧孔动力学过程和光谱孔的热稳定性。
4) inhomogeneously broaden
非均匀加宽
1.
An inhomogeneously broaden Nd∶CNGG laser end pumped by a CW laser diode was reported.
报道了连续激光器二极管 (LD)端面抽运的Nd∶CNGG非均匀加宽激光器。
2.
It is proved that inhomogeneously broadened lasers are different from homogeneously broadened ones either in theory or experiment, so the spatiotemporal dynamics will be different.
对于非均匀加宽激光器,理论和实验都已证明由于各种非均匀加宽效应的影响其时间动力学行为有别于均匀加宽激光器,其时空动力学行为也应有别于均匀加宽激光器。
6) Inhomogeneously broadening
非均匀加宽
1.
The amplification of highly chirped pulse with broadband in inhomogeneously broadening amplifier is investigated.
研究了非均匀加宽放大介质中宽带啁啾激光脉冲的放大情况。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条