1) back-gate
背栅
1.
Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistors;
背栅效应对SOI横向高压器件击穿特性的影响
2) back-gate effect
背栅效应
1.
Thesimulator, considering the special structure of SOI devices, studies the influencesof recombination-generation rate on parameters of internal devices and analyzesthe back-gate effect and the principle of Kink effect of Ⅰ-Ⅴ characteristics.
这个模型从SOI器件的特殊结构出发,着重考虑了复合-产出率对器件内部参数的影响,分析了SOI-MOSFET器件的背栅效应以及I-V特性的扭曲(Kink)效应产生的机理。
2.
The back-gate effects on front-channel subthreshold characteristics,on-r esistance,and off-state breakdown characteristics of these devices are studied in detail.
相比于源体紧密接触结构,低势垒体接触结构横向双扩散功率晶体管的背栅效应更小,这是因为低势垒体接触结构更好地抑制了浮体效应和背栅沟道开启。
3) plate fond and back grid
顶、背栅
1.
When JFET is used as input tube in the a low-noise and high-operational amplifier,to reduce the input bias and increase input impedance,plate fond and back grid can be separated and the plate fond can receive input signal alone and back grid connects the control circuit in the plate.
在JFET作输入管的低噪声高精度运放中,为了进一步减小输入偏流,增大输入阻抗,可使顶、背栅分离,且仅以顶栅接片内的控制电路。
4) back-gate diode
背栅二极管
5) back channel implantation
背栅沟道注入
1.
Partially-depleted silicon-on-insulator(PDSOI)floating-body(FB)nMOSFETs and H-gate type body-contacted(BC)nMOSFETs are fabricated with different back channel implantation dosages.
分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件。
补充资料：背对背
背靠背。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条