1) laser induced thermoelectric voltage signal
激光感生热电电压信号
2) laser induced thermoelectric voltage
激光感生热电电压
1.
Preparation and laser induced thermoelectric voltage effect of [(SrTiO_3)_n/(SrTi_(0.8)Nb_(0.2)O_3)_m]_(20)/LaAlO_3 superlattices
[(SrTiO_3)_n/(SrTi_(0.8)Nb_(0.2)O_3)_m]_(20)/LaAlO_3超晶格的制备及其激光感生热电电压效应
2.
33 MnO_3 (LPMO) thin films doped with Ag on vicinal-cut LaAlO_3 substrates were prepared using standard pulsed laser deposition technique, in which laser induced thermoelectric voltage (LITV) effect was found.
33MnO3(LPMO)系列薄膜,发现该类薄膜中有激光感生热电电压(LITV)效应。
3.
The Laser Induced Thermoelectric Voltage(LITV) of LaCaMnO3thin films which is a typical CMR materials and YBa2Cu3O7-.
利用晶体中各向异性的Seebeck效应产生激光感生热电电压(Laser Induced Thermoelectric Voltage，简记为LITV)，以及感生电压峰值与激光输出功率／能量的线性关系，可以将薄膜器件制作成激光功率／能量计。
4) laser induced thermoelectric voltage
激光感生电压
1.
Optimum thickness for laser induced thermoelectric voltage effect in high T_c superconductor and CMR thin film;
根据高温超导体 (HTSC)和巨磁阻 (CMR)薄膜中激光感生电压信号的时间关系公式 ,进一步导出产生最大激光感生电压所需的薄膜最佳厚度的方程式 。
5) laser induced voltage
激光感生电压
1.
Based on the equation of laser induced voltage deduced by H.
Lengfellner等人推导的激光感生电压公式以及笔者推导出的YBa2 Cu3O7-δ薄膜激光感生电压信号随时间变化公式的基础上 ,进一步导出产生最大激光感生电压所需的薄膜最佳厚度的方程式 。
2.
Upon KrF pulse laser irradiation(λ=248 nm,f=1 Hz,E=300 mJ),laser induced voltage(LIV)signal of LCSMO and LCMO thin films were measured and analyzed.
使用波长为248 nm的LPX300Ⅰ型KrF准分子激光进行照射,重复频率为1 Hz,能量为300 mJ,对LCSMO和LCMO薄膜表面产生的激光感生电压(LIV)信号进行采集。
6) laser-induced thermoelectric voltage
激光感生热电势效应
补充资料：标准操作冲击电压波形(见冲击电压发生器)
标准操作冲击电压波形(见冲击电压发生器)
standard switching impulse voltage waveform
b .oozhun CooZuo ChongJld，onyo boxlng标准操作冲击电压波形(standard switchingimpulse voltage waveform)见冲击电压发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条