It was found that the efficiency after variable temperature phosphorus gettering was much better than that of isothermal one for cast multicrystalline silicon, especially in the high quality zone of as-grown materials, and the optimal parameter of variable temperature phosphoru.

The effect of phosphorus gettering or hydrogen passivation on the electrical properties of cast multicrystalline silicon contaminated by iron at different temperatures is investigated by microwave photo conductive decay.

The influences of phosphorus gettering, aluminium gettering and P/Al cogettering on multicrystalline silicon lifetime and electrical performance are mainly studied.

Effects of parameters of guiding vane on nitrification and phosphorus uptake in the SUFR system based on grey relational entropy;

Fabrication of SOI Materials and Nanocavities Gettering;

It is described that a series research of heavy phosphorous diffusion gettering, aluminum and combination of aluminum and phosphorous gettering (evaporation of aluminum on the back of the wafers) are used to fabricate multicrystalline silicon solar cells with different impurity concentration of interstitial oxygen.

Three ways of gettering of polycrystalline silicon are compared: gettered by porous silicon, gettered by heavy phosphor diffusion and gettered by porous silicon combined with heavy phosphorous diffusion.