1) resistive transition
电阻转变
1.
A study on resistive transition and anisotropy of MgB_2/Al_2O_3 superconducting thin films;
关于MgB_2/Al_2O_3超导薄膜电阻转变和各向异性的研究
2.
The resistive transitions of the TBCCO/LAO were investigated at different magnetic fields using a standard four-probe method.
通过标准四引线方法对TBCCO/LAO高温超导薄膜在不同磁场下的电阻转变进行了研究。
2) resistivity transition
电阻转变
1.
Based on the Kosterlitz-Thouless(KT)phase transition model of two-dimensional systems,by introducing the thermal activation energy and the mean height of the pinning landscape into the correlation length,a modified KT transition model has been proposed to study the temperature dependence of the resistivity transition in anisotropic superconductors.
应用修正的KT相变模型研究磁场下Tl2Ba2CaCu2Ox(Tl-2212)薄膜电阻转变的标度行为,发现由电阻转变计算得到的平均钉扎高度与温度具有线性依赖关系,实验结果支持修正的KT相变模型。
3) time-varying rotor resistance
时变转子电阻
4) variable-resistance transducer
可变电阻转换器
5) resistive switching behaviors
电阻转变特性
1.
The TiO2 thin films with resistive switching behaviors were grown on Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition(PLD).
采用脉冲激光沉积法(PLD),以Pt(111)/Ti/SiO2/Si为衬底,制备了具有电阻转变特性的TiO2薄膜。
6) electric-pulse-induced resistance change
电脉冲诱发电阻转变
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条