1) very high frequency plasma enhanced chemical vapor deposition(VHF-PEVCD)
甚高频等离子体化学气相沉积(VHF-PEVCD)
2) very-high-frequency plasma enhanced chemical vapor deposition(VHF-PECVD)
甚高频等离子体化学气相沉积(VHF-PECVD)
3) VHF-PECVD
甚高频等离子体增强化学气相沉积(VHF-PECVD)
1.
This paper studies the deposition of the transition p layer (from microcrystalline phase to amorphous phase) as window layer in high-rate deposition of amorphous silicon thin film solar cells by using very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).
研究了采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术沉积从微晶相向非晶相相变的过渡区p层,并将其作为电池的窗口层应用到高速沉积的非晶硅薄膜电池中。
4) very high frequency plasma enhanced chemical vapor deposition
甚高频等离子体增强化学气相沉积
1.
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequency plasma enhanced chemical vapor deposition;
甚高频等离子体增强化学气相沉积大面积平行板电极间真空电势差分布研究
2.
In the process of the high growth rate μc-Si:H film deposited by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD),the high energy ion impinging on the growing surface could deteriorate the device performance.
在采用高压高功率的甚高频等离子体增强化学气相沉积(VHF-PECVD)技术高速沉积微晶硅(μc-Si:H)太阳电池过程中,产生的高能离子对薄膜表面的轰击作用会降低薄膜质量和破坏p型掺杂层(p层)与本征层(i层)之间的界面特性。
3.
The deposition parameters of hydrogenated microcrystalline silicon(μc-Si:H)films were optimized for two factors,the siliane concentration and total flow rate,under high deposition power density and high deposition pressure by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术在高功率密度和高压强条件下,通过改变硅烷浓度和气体总流量对薄膜沉积参数进行了两因素优化,最终在硅烷浓度为4。
5) VHF-PECVD
甚高频等离子体增强化学气相沉积
1.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.
在掺杂P室采用甚高频等离子体增强化学气相沉积( VHF-PECVD)技术,制备了不同硅烷浓度条件下的本征微晶硅薄膜。
2.
Finally, high-quality microcrystalline silicon (μc-Si:H ) materials and relatively high efficiency solar cells using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) were prepared in a single chamber.
本文在单室中采用甚高频等离子体增强化学气相沉积技术,以降低单室沉积工艺中的界面污染和提高单室沉积微晶硅电池的性能为目标,详细研究了单室沉积中的交叉污染问题、不同处理硼污染的方法及其在微晶硅电池中的初步应用。
3.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) in a single-chamber under different boron-contamination conditions.
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同腔室环境下的微晶硅薄膜。
6) very high frequency plasma-enhanced chemical vapor deposition
甚高频等离子体增强化学气相沉积
1.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
2.
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池 。
补充资料：甚的
1.什么。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条