The metallic bonding technique is summarized generally, including its developing status, fundamental process and methods, characterization and application to the optoelectronic devices.

SiGe/Si heterostructure optoelectronic devices and their optoelectronic integrated circuits (OEIC) are attractive research domains in the world.

ZnO material has a long history in the application of piezoelectric devices.

Experimental investigation of the optoelectronic device spectral response characteristic;

The numerical analysis and experimental simulation approaches were studied for radiation effects of typical optoelectronic devices, such as Si solar cells and CCDs.

In the process of photoelectric technology industrialization, the importance of photoelectric devices increasingly appears.

The heat flows between the two ends of a thermoelectric device and their contacted heat sources are derived by means of nonequilibrium thermodynamic theory.

Introduced research of thermoelectric micro-generator in the world, we study the thermoelectric properties of the thermoelectric device an.