1) integrated gate
集成门极
1.
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
2) IGCT
集成门极换流晶闸管
1.
Application of IGCT in Coal Mine;
集成门极换流晶闸管IGCT在矿山中的应用
2.
Application of IGCT on Power System;
集成门极换流晶闸管在电力系统中的应用
3.
IGCT(Integrated Gate Commutated Thyristor) is widely used in mid-voltage field.
集成门极换流晶闸管(IGCT)在中压领域的应用越来越广泛。
3) integrated gate commutated thyristor
集成门极换流晶闸管
1.
In this paper we model Asymmetric Integrated Gate Commutated Thyristor by using PISCES-2ET software, and obtain the model graph, which include impurity concentration profile, concentration of electron and hole, and potential.
运用PISCES-2ET软件对非对称型集成门极换流晶闸管进行器件模拟,给出了器件的杂质浓度、电子和空穴浓度和电势的二维和三维分布;通过模拟结果来验证设计是否合理,对下一步设计器件的物理参数和结构参数起到指导作用。
4) integrated gate commutated thyristor
集成门极换向晶闸管
1.
Through analyzing the topology,control system and protection system of large power high voltage converter equipped with integrated gate commutated thyristor(IGCT),a set of 7.
通过对大功率集成门极换向晶闸管(IGCT)高压变流器的结构、控制系统、保护系统的研究,设计出一套7。
5) IGCT
集成门极换相晶闸管
1.
In order to analyze the influence of stray inductances on anode-cathode voltage of IGCT(Integrated Gate Commucated Thyristor) in the inverter,a single 2T-3R simulation model of IGCT is established and the influence of stray inductances on anode-cathode voltage of IGCT is simulated using PSpice(Personal Simulation program with IC emphasis).
为了分析逆变器中杂散电感对集成门极换相晶闸管(IntegratedGateCommucatedThyristor,简称IGCT)端部电压的影响,利用PSpice软件包建立了IGCT的2T-3R子电路模型,得出了考虑逆变电路中杂散电感影响的IGCT端部电压仿真波形。
6) IGCT
集成门极换向型晶闸管
1.
The excellent characteristics of IGCT make it suitable for implementing medium voltage drive (MVD).
集成门极换向型晶闸管 ( IGCT)的优良性能使其适合于实现高—高方式的高压变频调速装置。
2.
Characteristics of the transparent anode for the integrated gated commutated thyristor(IGCT) is analyzed and numerically simulated.
分析了集成门极换向型晶闸管 (IGCT)的透明阳极相对于传统阳极的特点 ,并进行了数值模拟 。
3.
The em ergency of the hard driven concept drastically improves the turn- off performance of GTO,and brings about a new type of power semi- conductor nam ed integrated gate commutated thyristor IGCT .
硬驱动概念的出现极大地改进了门极可关断晶闸管 (GTO)的关断性能 ,并导致了集成门极换向型晶闸管 (IGCT)的出现。
补充资料：发射极耦合逻辑集成电路
晶体管导通时工作在非饱和区的一种逻辑集成电路。有“或”和“或非”两种输出。可构成各种逻辑关系。特点为开关速度快，甚至达亚毫微秒，但功耗大，抗干扰力差。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条