This paper presents a surface-potential-based analytical current and capacitance model of polysilicon thin-film transistors(poly-Si TFTs) for circuit simulation,in which the non-iterative numerical algorithm is adopted to calculate the surface potential of poly-Si TFTs as a function of terminal voltage,thus greatly enhancing the efficiency of the proposed model.

The analytical models of surface potential and threshold voltage for the fully depleted device are constructed by solving the 2D potential Poisson s equation.

An explicit solution to the polysilicon Thin-Film Transistors(poly-Si TFTs) implicit surface potential equation has been derived.

The results show that the magnetite particle's surface potential can increase by adsorbing the polyacrylic,electricity repulsion between the particle hinders the reuniting of the magnetized particle,the anti.

Besides,their surface potential was also evaluated with the electric force .

Objective:To investigate the effect of dry heat antisepsis on charge storage stability of porous polytetrafluoroethylene(PTFE) films by measuring the isothermal surface potential(V S) decay,open-circuit thermally stimulated discharge(TSD), and piezoelectric d 33 coefficient.

This paper analyses the metal surface barrier and the work function with quantum theory,so that it supplements the defects of the ordinary teaching material about this problem.

The value of surface barrier height of nanocrystalline and cast SS304 are 19.

By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrdinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes.