1) gettering
[英]['getəriŋ] [美]['gɛtərɪŋ]
吸杂
1.
Fabrication of SOI Materials and Nanocavities Gettering;
SOI材料的制备及纳米空腔吸杂
2.
It is described that a series research of heavy phosphorous diffusion gettering, aluminum and combination of aluminum and phosphorous gettering (evaporation of aluminum on the back of the wafers) are used to fabricate multicrystalline silicon solar cells with different impurity concentration of interstitial oxygen.
对不同氧含量的太阳电池用多晶硅片进行了磷扩散吸杂,铝吸杂及磷铝联合吸杂的研究,用准稳态光电导衰减法(QSSPCD)和太阳电池效率测试系统测试了吸杂前后多晶硅片的少子寿命和IV曲线。
3.
Three ways of gettering of polycrystalline silicon are compared: gettered by porous silicon, gettered by heavy phosphor diffusion and gettered by porous silicon combined with heavy phosphorous diffusion.
吸杂是减少硅中杂质和缺陷,提高多晶硅太阳电池效率的一种有效手段。
2) impurity adsorption
杂质吸附
3) absorb inclusion
吸收夹杂
1.
Mathematical analysis for the ability of mold flux in billet continuous casting to absorb inclusion(Al 2O 3) is done,the influences of the speed α or β to absorb Al 2O 3 in melted flux pool,the basicity of mold flux,the billet drawing speed,and the original composition of the mold flux to the change of Al 2O 3 density in melting flux pool are discussed.
对方坯连铸保护渣吸收夹杂（ Ａｌ２ Ｏ３ ）的能力进行了数学分析；讨论熔渣池吸收 Ａｌ２ Ｏ３ 的速率 α或 β、保护渣的碱度、拉坯速度以及保护渣的原始成分对熔渣池 Ａｌ２ Ｏ３ 浓度变化的影响。
4) internal gettering
内吸杂
1.
The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
集成电路特征线宽的不断减小对直拉(CZ)单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
5) absorbing inclusion
吸收杂质
1.
Thermodynamics damage of optical coatings induced by absorbing inclusions was studied based on thermal irradiation model.
在考虑吸收杂质发生相变的情况下,计算了吸收杂质汽化对薄膜产生的蒸汽压力,论证了薄膜发生宏观破坏的可能性。
6) phosphorus gettering
磷吸杂
1.
It was found that the efficiency after variable temperature phosphorus gettering was much better than that of isothermal one for cast multicrystalline silicon, especially in the high quality zone of as-grown materials, and the optimal parameter of variable temperature phosphoru.
用微波光电导衰减仪(μ-PCD)研究了不同温度和时间的恒温和变温磷吸杂处理对铸造多晶硅片电学性能的影响。
2.
The effect of phosphorus gettering or hydrogen passivation on the electrical properties of cast multicrystalline silicon contaminated by iron at different temperatures is investigated by microwave photo conductive decay.
应用微波光电导衰减仪的方法研究了在不同温度情况下引入铁沾污后再分别进行磷吸杂和等离子体增强化学气相沉积钝化处理对铸造多晶硅片电学性能的影响。
3.
The influences of phosphorus gettering, aluminium gettering and P/Al cogettering on multicrystalline silicon lifetime and electrical performance are mainly studied.
本文针对磷扩散和铝背场制备为多晶硅太阳电池制造过程中的常规工序,在系统综述当前多晶硅太阳电池的吸杂进展、前景和面临的问题的基础上,研究了磷吸杂、铝吸杂和磷铝共吸杂对多晶硅少子寿命和电性能参数的影响,摸索了三种吸杂方式的最佳吸杂参数;并研究了多晶硅中氧炭含量、金属杂质含量及金属杂质存在形态以及位错、缺陷密度对吸杂的影响;同时对吸杂的模拟和仿真做了初步的摸索,得到了一系列的实验结果,为通过吸杂来提高多晶硅太阳电池效率提供了有益的参考和指导。
补充资料：内吸除(见单晶片的吸除技术)
内吸除(见单晶片的吸除技术)
internal gettering
内吸除internal gettering见单晶片的吸除技术。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条