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1)  sealing defect
密封缺陷
1.
They were attributed to abnormal degradation of varistors,sealing defect, unproper assembling or degradation of grading capacitors,insulation defects at inner parts,inner partial discharge or overheating,overheating of external insulation due to pollution,moisture ingress and ero- sion at waterproof part,failure of MOA trunk due to bending stress,defects of MOA fittings,etc.
对2005年以来广东省金属氧化物避雷器运行故障和典型缺陷进行分类介绍和原因分析,认为存在避雷器电阻片异常老化、密封缺陷、均压电容装配不良或变值、内部器件绝缘缺陷、内部局放或过热、外绝缘积污致热、防水部位进水锈蚀、避雷器本体遭受弯曲应力损坏、避雷器附件缺陷等问题。
2)  Plastic packages defects
塑封缺陷
3)  defect density
缺陷密度
1.
It was shown that the film surface defect density could decreased by applying deposition temperature.
结果表明:通过加温可以降低薄膜的表面粗糙度与缺陷密度大小。
2.
The results show that the defect density is decreased great after treatment.
6μm CO2激光辐照处理,结果表明,处理后GaN薄膜的缺陷密度明显降低。
4)  defects density
缺陷密度
1.
Low defects density is necessary for high quality software.
软件的缺陷是软件质量的重要因素之一,低缺陷密度的软件是高质量软件的必要条件。
5)  defect densities
缺陷态密度
6)  high defect-density region
密度缺陷区
补充资料:点缺陷(见晶体缺陷)


点缺陷(见晶体缺陷)
point defect

  点缺陷point defeet见晶体缺陷。
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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