Study on the target location in solar blind ultraviolet detecting system;

UV warning technology is one of the important missile warning ways,it detects the radiation signature in the UV solar blind spectral band that is emitted from the approaching hostile missile plume.

This paper is to develop the key technologies of ultraviolet detecting, which include ultraviolet solar blind filter, spectrum conversion, image intensifying and the examining system of double spectrum image.

High Al content AlGaN was grown on double polished(0001) sapphire substrate by MOCVD,and AlGaN based solar-blind PIN UV photodetector was developed.

To research a novel solar-blind material,Mg_xNi_ 1-xO thin film with absorption edges in the solar-blind region (240～280nm) is successfully prepared on quartz substrates by sol-gel method followed by post annealing at different temperatures.

To achieve solar-blind UV detection(the cutoff wavelength shorter than 280 nm),the Al component of the AlGaN active layer must be higher than 40%,and the window layers need to reach 60%.

The growth,fabrication,and characterization of a solar-blind AlGaN-based p-i-n back-illuminated photodetector with a high temperature AlN template are reported for the first time.

Photodetectors operating in the wavelength range of 240～280nm, referred to as the solar-blind region, can be uesed for applications such as missile plume detection, flame detection, and secure-from-earth inter-satellite communication.

Ultraviolet communication bases on atmospheric scattering with center wavelengths(200-280nm) in the solar blind region.

8eV, so that Mg_xZn_(1-x)O Ternary compounds have a wide application prospect in the UV, Visible emitting devices and solar blind region UV detectors.

The absorption edge of film is located in the solar blind region.