1) barrier capacitance
介质电容
1.
The influences of change of applied voltage and gap distance on Cd(barrier capacitance),Cg(gas gap capacitance) and C(load capacitance) were experimentally studied.
结果表明,给定介质厚度和电源频率时,随外加电压的增加,Cd逐渐增大,在相同的电压下,Cd随气隙距离的增加而减小;Cg随外加电压的增大而减小,在相同的电压下,Cg随气隙距离的增加也是减小的;C随外加电压先增大再减小,中间会达到一个最大值,相同电压下,随着气隙距离的增加,介质电容减小,而且,随着气隙距离加大,介质电容所能达到的峰值会减小。
2) dielectric capacitor
介质电容器
1.
Frequency response ch aracteristics of superca -pacitors utilizing both carbon nanotube and activated carbon electrodes were worse than that of dielectric capacitors.
但是上述两类超级离子电容器的频率响应特性均比传统介质电容器的频率响应特性差。
3) DRAM capacitor
DRAM电容介质
5) dielectric permittivity
介质电容率
6) capacitor with conductive medium
导电介质电容器
补充资料：介质损耗角正切试验(见电容率与损耗因数试验)
介质损耗角正切试验(见电容率与损耗因数试验)
dielectric loss tangent test
)!eZh.sunhooJ一002匕engq一e sh一yon介质损耗角正切试验(dieleetri。1055 tangenttest)见电容率与损耗因数试验。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条