1) thin film of quantum well
量子阱薄膜
1.
Design of a NEMS vector hydrophone based on thin film of quantum well;
基于量子阱薄膜的纳机电矢量水听器设计
2.
According to the theory of Meso-piezoresistance effect,a high g accelerometer is designed with the sensitive unit of thin film of quantum well.
依据介观压阻效应原理,设计出一种以超晶格量子阱薄膜为敏感单元的高g值纳机电加速度计,期望利用超晶格量子阱薄膜的高灵敏特性,提高加速度计的灵敏度。
2) quantum Heisenberg film
量子Heisenberg薄膜
4) Quantum well
量子阱
1.
Resonant modes in quantum well structure composed of photonic crystals with different lattice constants;
不同晶格常数光子晶体构成的光量子阱中的共振模
2.
Optical properties and material growth of GaAs(110) quantum wells;
GaAs(110)量子阱材料生长和光学特性
3.
Light emitting model of GaN LED quantum well;
GaN LED量子阱光发射模型
5) photonic quantum well
光量子阱
1.
Modulated photon confined states with graded-index photonic quantum well structure;
渐变折射率光量子阱对束缚态能级的调整
6) Multiple Quantum wells
多量子阱
1.
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;
反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.
GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.
The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.
利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条