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1)  average etching rate
平均刻蚀速率
2)  Etch Rate Uniformity
刻蚀速率均匀性
3)  Etching rate
蚀刻速率
4)  etching rate
刻蚀速率
1.
The etching rate and mechanism for quartz and BK7 glass in CF_4/CHF_3 as working gas were investigated as a function of gas composition, gas flowrate and RF bias voltage, and the results showed that the etching rate is in direct proprtion to the mean square root of RF bias voltage.
用CF4/CHF3作为工作气体对石英和BK 7玻璃进行了研究,分析了气体组分、气体流量和射频偏压等几种因素对刻蚀速率的影响,结果表明刻蚀速率与射频偏压的均方根成正比。
2.
In this paper, an investigation of the laser chemical etching of the Nickel-ironalloy(Ni=52%) in sodium nitrate solution by using a relatively low power Argon-ion laser hadbeen made, etching rates had been determined as a function of laser power and solution concent-ration, etching mechanism had been analysed.
利用氩离子激光,在较低的激光功率下,对铁镍合金(Ni=52%)在硝酸钠溶液中的激光化学刻蚀作了研究,给出了刻蚀速率与激光功率和溶液浓度之间的关系曲线,分析了刻蚀的机理。
3.
And the effects of these factors on etching rate and etching results were discussed and analyzed in detail.
实验中可以明显观察到刻蚀过程中的反应限制阶段与扩散限制阶段,说明经过长时间的刻蚀,HF酸的扩散效应将成为影响刻蚀速率的主导因素。
5)  etch rate
刻蚀速率
1.
Isotropic chemical reaction etch plays major role in etch rate of Si when cathode temperature from 0℃ to 80℃,but in cryogenic etching(cathode temperatur.
7 Pa、11Pa时,基片温度的改变对其刻蚀速率的影响。
2.
The etch rate and mechanisms were measured and analyzed as a function of ion energy, ion beam density and ion incidence angle.
给出了离子能量、离子束流密度和离子束入射角等因素与刻蚀速率的关系曲线,用最小二乘法拟合了上述因素与刻蚀斜率的函数关系方程;分析了光刻胶和基片在刻蚀过程中随刻蚀深度的变化对图形转移精度的影响,用AFM的Tapping模式测量了刻蚀前后HfO2薄膜表面质量的变化。
3.
The etch rate and selectivity of Si and SiNx have been studied in SF6+Cl2 plasma by statistacl experiment method in this paper.
在相同的输出功率和压力的条件下,将Si和SiNx的刻蚀速率和选择比表示为SF6百分比含量的函数。
6)  average corrosion rate
平均腐蚀速率
1.
Comparative result shows that taking specimens\'average corrosion rate and corrosion depth for jeopardizing evaluation of pipeline local corrosion is unscientific Statistics of extremes could be applied to count soil corrosion of pipeline, which shall be used as a basis of the evaluation.
通过失重法计算其平均腐蚀速率、平均腐蚀深度及用极值法预测最大腐蚀坑深。
补充资料:电化学刻蚀
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性质:也称电解浸蚀。在一定的电解液中,采用电化学原理选择性地除去某种金属(或半导体)的过程。可外加电压(为电刷镀的逆过程)或不外加电压(化学刻蚀)。影响电化学蚀刻的因素有电场强度和频率、探测器厚度、蚀刻液浓度和径迹倾角等。化学刻蚀法使用较多,例如在印刷电路板的制作中,通过如下反应:Cu→Cu2++2e-(阳极) ;2Fe3++2e-→2Fe2+(阴极)。按预作保护的图样除去绝缘基板上的铜覆盖层。在微电子装置的制作中,对半导体(如硅)选择性地刻蚀是关键步骤。常用的刻蚀剂有CuCl2,FeCl3,H2CrO4,NH4Cl,H2O2-H2SO4等。

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