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1)  Wide energy range
宽能区
2)  Wide Energy Range Neutrons)
宽能区中子
3)  zone broadening
区带展宽
1.
The factors affecting zone broadening in capillary electrophoresis - amperometric detection (CE/ AD) at a disk-shaped electrode were theoretically analysed, and a model equation about it was given.
从理论上分析了影响毛细管电泳柱端盘状电极安培检测区带展宽的诸因素,给出了 区带展宽的模拟公式。
4)  Wide temperature range
宽温区
1.
In this paper, the unconstant surface mobility effect of MOSFET in the wide temperature range from 27℃ to 300℃ is deeply studied on the base of investigation of the high temperature models of fundamental physical parameters in silicon and the fundamental characteristics of the MOSFET.
在对硅材料基本物理参数的高温模型和宽温区 ( 2 7~ 30 0℃ ) MOSFET基本特性深入研究的基础上 ,进一步研究了宽温区 MOSFET的非常数表面迁移率效应。
2.
In this paper,thinking of the existence of leakage current,we make out a simple analytical model of CMOS inverter s input and output feature in wide temperature range We find out the main factors that limit the high temperature performance of CMOS circuits Finally,this model is testified by the experiments result
在考虑了器件高温泄漏电流的前提下 ,建立了宽温区CMOS倒相器的传输特性模型 ,明确了制约CMOS电路高温性能的主要因素以及设计的关键之处 最后 ,用实验检验了该模型的合理
5)  permissive clear district
宽容净区
6)  broadband networks estates
宽带小区
1.
In light of the living example of the business expansion of China Unicom Xuzhou Branch broadband networks estates,discussion is held on strengthening the telecommunication operation marketing and improving the service abilities to make it better prop up the rapid growth of the broadband networks industry.
结合徐州联通宽带小区业务发展实例,对加强电信运营营销,提高服务能力,使其更好地支撑宽带行业的快速增长进行了探讨。
补充资料:宽禁带半导体(见半导体的能带结构)


宽禁带半导体(见半导体的能带结构)
wide gap semiconductor

  习一’平叼能带结构。‘J~正J“、二二,,Conauctor见半
  
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