1) TiN plasma vapourdeposit
TiN等离子气相沉积
2) plasma chemical vapor deposition
等离子体化学气相沉积
1.
Influence of discharge current on hot cathode plasma chemical vapor deposition of diamond films;
放电电流对热阴极等离子体化学气相沉积金刚石膜影响
2.
Effect of plasma chemical vapor deposition parameters on electron property in Ar plasma;
等离子体化学气相沉积参量对Ar等离子体电子特性的影响
3.
The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.
研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中,热阴极辉光放电特性与金刚石膜沉积工艺的关系。
3) PCVD
等离子体化学气相沉积
1.
DEPOSITION THEORY OF THIN HARD PCVD COATINGS;
等离子体化学气相沉积(PCVD)硬质膜成膜理论
2.
Si B N composite films had been prepared at proper processing parameters by RF PCVD.
使用工业射频等离子体化学气相沉积 (RF -PCVD)设备 ,通过控制合理的工艺参数 ,在不同的基体负偏压下 ,分别制备出了Si B N非晶以及含有h BN、c BN显著结晶相的Si B N复合薄膜。
3.
SnO 2 Sb thin film is prepared with PCVD The film possesses better gas sensitivity When temperature rises, the response time maintains almost the same but the recovery time reduces and the sensibility gets higher When the temperature reaches 200℃ or more, the sensitivity maintains stable The difference between the sensibility of the resistors of different resistance is small (4 refs
利用等离子体化学气相沉积法制备了ＳｎＯ２－Ｓｂ导电薄膜，测试了ＳｎＯ２－Ｓｂ的气敏效应。
6) plasma enhanced chemical vapor deposition
等离子体化学气相沉积
1.
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
2.
This review will describe the deposition methods, properties and some applications of DLC films by Plasma Enhanced Chemical Vapor Deposition.
这篇综述介绍了用等离子体化学气相沉积DLC膜的沉积方法、所制备薄膜的性能及应用,最后展望了DLC膜的发展趋势。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条