1) indium tin oxide films
铟锡氧化物膜
2) ITO film
铟锡氧化物薄膜
3) Indium-Tin oxide
铟锡氧化物
1.
Indium-Tin oxide transparent conductive films were prepared by DC sputtering method using hot-isostatic pressed ITO target,and the effects of oxygen partial pressure on the microstructures and properties of Indium-Tin oxide films were studied.
通过直流磁控溅射热等静压铟锡氧化物(ITO)靶材制备ITO导电薄膜,并且针对O2-Ar混合气氛中氧的分压对ITO膜的结构、表面形貌、透光率以及导电率的影响进行了研究。
2.
, preparation of spherical or acicular indium-tin oxide (ITO) powders and preparation of ITO targets by hot isostatic pressing (HIP) were comprehensively investigated, and cylindrical ITO targets having a relative density of higher than 99% were obtained.
本论文以热等静压制备铟锡氧化物(ITO)靶材的工艺流程为主线,借助热分析(TGA-DTA)、X 射线衍射(XRD)、透射电镜(TEM)、扫描电镜(SEM)、能量分散谱(EDS)等分析手段,系统地研究了球形和针状ITO 粉末的制备以及热等静压制备ITO 靶材的相关工艺,成功地制备了外形规整的、密度大于99%的圆柱形ITO 靶材。
4) Indium tin oxide
铟锡氧化物
1.
Preparation of ultra-fine indium tin oxide powders with high specific surface areas by co-precipitation method;
共沉淀法制备高比表面积的铟锡氧化物超细粉末
2.
Effect of heat treatment temperature on microstructure of nano-powders of indium tin oxide;
热处理温度对铟锡氧化物纳米粉显微结构的影响
3.
A simple hydrothermal process has been developed to synthesize indium tin oxide nanoparticles by employing In_2O_3 and Sn nanoparticles prepared by thermal plasma method as reactant and NaOH solution as the solvent.
采用三氧化二铟和真空蒸发法制得的纳米锡粉为原料,溶解在一定浓度的氢氧化钠溶液中,水热条件下成功的合成了纳米级的铟锡氧化物粒子,通过粉末 X 射线衍射(XRD),场发射扫描电子显微镜(FE-SEM), 透射电子显微镜(TEM)和紫外可见光光吸收光谱 (UV-Vis)等手段对所得产物进行表征。
6) ITO
[英]['i:,təʊ] [美]['i,to]
铟锡氧化物
1.
Investigation on Densification of ITO Ceramic Target by Using HIP Technique;
铟锡氧化物陶瓷靶材热等静压致密化研究
补充资料：银-氧化锡-氧化铟
分子式：
CAS号：
性质：银基含氧化锡(SnO2)和三氧化二铟(In2O3)的复合电接触材料，抗熔焊性和耐磨性能均良好。In2O3可改善电接触性能。如Ag-8SnO2-15In2O3的密度9.85～10.4g/cm3。布氏硬度785～1176.8MPa。电阻系数3.00～3.50×10-2Ω·mm2/m。用内氧化法制造。优良的中等负荷电接触材料，作断开电接点。
CAS号：
性质：银基含氧化锡(SnO2)和三氧化二铟(In2O3)的复合电接触材料，抗熔焊性和耐磨性能均良好。In2O3可改善电接触性能。如Ag-8SnO2-15In2O3的密度9.85～10.4g/cm3。布氏硬度785～1176.8MPa。电阻系数3.00～3.50×10-2Ω·mm2/m。用内氧化法制造。优良的中等负荷电接触材料，作断开电接点。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条