A variational method and the force balance equation are adopted to investigate the influence of optical-phonon scattering(including interface optical phonons and half-space optical phonons) on the mobility of a two-dimensional electron gas in a wurtzite AlN/GaN heterostructure by taking energy band bending and finite barrier into account.

A variational method,combined with solving the force balance equation is adopted to investigate the biaxial strain and hydrostatic pressure influence on the electronic mobility in a strained wurtzite AlN/GaN heterojunction within the temperature range dominated by optical-phonon scattering.

A method to solve the scattering acoustic field of complex target was proposed for the near-field scattering characteristics of an underwater target in high-frequency.

Effect of phonon frequency on phonon scattering in isotope-doped Si;

This paper focuses on the phonon frequency effect and the isotope-doped concentrates effect on the phonon scattering in isotope-doped Si.

Phonons play a great role in the microcosmic mechanism of heat transfer of silicon,the process of phonon scattering in doped silicon is studied by molecular dynamics simulation with high performance computers in this paper, then the composition of energy is analyzed after scattering,in which the greater transmitted energy means the high thermal conductivity qualitatively.