1) photoelectric response
光电响应
1.
The causes for CCD dark current and photoelectric response are theoretically analyzed.
从理论上分析了CCD暗电流和光电响应不均匀性产生的原因,根据光电响应模型提出了CCD像素光电响应不均匀性的校正方法,给出了像素光电响应不均匀性的校正系数用以计算校正量;并针对实际情况中干扰光的影响,提出了采用变波长去除干扰方法,对校正方法进行了修正;最后通过仿真对算法进行了验证。
2.
The influence of non-uniformity for sub-pixel determination, the cause for CCD dark current and photoelectric response are theoretically analyzed.
从理论上分析了像素响应不均匀性对CCD亚像素细分的影响 ,以及CCD暗电流和光电响应不均匀性产生的原因。
3.
The evaluating algorithm of the probability contribution of BR′s spectrum and photoelectric response is suggested on the basis of the perceptron algorithm.
依据感知器原理提出了光谱和光电响应概率贡献的估计算法 ,进行了实例运算 。
2) Photoresponse
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光电响应
1.
Origin of Photoresponse Transition of Copper Electrode from p-Type to n-Type;
铜电极光电响应p型转变为n型的机理探讨
2.
The crystal structure and photoresponse of ZnO thin films fabricated on ITO substrates;
在双层薄膜中空间内建电场的存在有助于光生电子和空穴有效地分离,使ZnO/ITO双层薄膜具有较强的光电响应能力,光电流达14μA。
3) electronic-opto response
电光响应
1.
The reform involves the adoption of a laser to emit a LCD panel, and a detector to measure the characteristic of viewing angle and electronic-opto response of LCD pixel.
通过实验系统功能的扩展,利用一激光照射液晶屏,再通过一激光探测器进行测试,可测试液晶像素的视角特性和电光响应曲线,强化了学生综合能力的训练。
4) photocurrent response
光电流响应
5) photoconductive response
光电导响应
1.
The profiles of the stable-antephotoconductive response and the minority carrier lifetime of a narrow band Hg1-xCdxTewere studied.
实验测量了光斑的尺寸，最后用此光学系统研究了窄禁带半导体Ｈｇ１－ｘＣｄｘＴｅ的稳态光电导响应和少子寿命分布。
2.
The uniformity of the stable-state photoconductive response and the transient decay response of Hg1-xCdxTe (MCT) material is studied.
研究了Hg_(1-x)Cd_xTe的稳态光电导响应和瞬态响应的均匀性,用可调谐连续Pb_(1-x)Sn_xTe激光测量稳态光电导,用GaAs/GaAlAs脉冲激光激发瞬态光电导。
6) electrooptic frequency response
电光频率响应<光>
补充资料：光电对抗侦察(见光电对抗)
光电对抗侦察(见光电对抗)
electro-optical reconnaissance of electronic warfare
guangdian duikang zheneha光电对抗侦察(elee‘ro一op‘ical reconnais-sanee ofeleetronicwarfare)见光电对抗。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条