1) rotation potential barrier
转动势垒
1.
Dissociation energies of the three ionic clusters have also been calculated, and the rotation potential barriers of N+2 in these clusters have been estimated at the UHF/6-311G level.
用ＵＨＦ／６－３１１Ｇ方法，计算了Ｎ＋２离子在ｎ个氖原子（ｎ＝１，２，３）氛围中的转动势垒。
2) rotation barrier
旋转势垒
1.
The rotation barrier of titled compound were also computed by using B3LYP method at 6-311++G(3df,2p) sets.
用优化计算的平衡几何构型,在B3LYP/6-311++G(3df,2p)//B3LYP/6-311++G(3df,2p)计算了各标题物的旋转势垒。
2.
The rotation barrier were also computed by using B3LYP methods at 6-311++G(d,p) levels.
用优化的几何构型在B3LYP/6 311++G(d,p)//B3LYP/6 311++G(d,p)水平计算了标题物的旋转势垒。
3) dynamic barrier
动力学势垒
1.
It is found that with decrease of incident energy the lowest dynamic barrier is obtained which approaches to the adiabatic static barrier and with increase of the incident energy the dynamic barrier goes up to the diabatic static barrier.
随着入射能的降低可以观察到动力学势垒的最低值,这个最低动力学势垒与绝热势垒非常接近;动力学势垒随着入射能的增加而升高,最终接近于静态势垒(非绝热势垒)。
2.
It is found that the lowest dynamic barrier is obtained which approaches to the adiabatic static barrier with the incident energy decreasing and the dynamic barrier goes up to the diabatic static barrier with increase of the incident energy.
用改进的量子分子动力学模型研究了与入射能量相关的重离子熔合反应86Kr+100Mo的动力学势垒。
4) potential barrier
势垒，位垒
5) potential barrier
势垒
1.
Effect of ionic vacancies on potential barrier at grain boundaries in BaTiO_3.;
钛酸钡陶瓷离子缺位对晶界势垒的影响
2.
How to analyze particle wavefunction of tunneling rectangular potential barrier——On an alteration in the new printing of Atomic Physics by Professor Chu Shenglin;
如何分析隧穿直角势垒的粒子波函数——评褚圣麟先生《原子物理学》在新印本中的一个变动
6) barrier
[英]['bæriə(r)] [美]['bærɪɚ]
势垒
1.
The results show that the probability crossing cell membrane is influenced by the ion-energy in the cell membrane channel, height and width of the barrier.
本文提出了细胞膜通道中离子跨膜运输的物理图象并通过数值模拟,研究了离子跨膜运输的几率对电磁场的响应,认为膜通道内离子的能量、势垒的高度以及势垒的宽度均对跨膜运输的离子的几率产生影响。
2.
The field emission of diamond film involves the electrons travel from the negative end of the power supply, through the various interfacial contacts, through the bulk of the film itself, to the film surface,then tunnel through the potential barrier,propagate through the vacuum gap, before finally reaching the anode.
金刚石膜场致发射过程是电子从导电基底开始,经基底/金刚石界面、金刚石薄膜体内传输到表面,然后穿过表面势垒进入真空、经真空电场加速到达阳极的一个复杂过程。
3.
The form of MgSO\-4 dosing in varistor ceramic lattice as shown in microtexture graph and its effect on ZnO crystal barrier is briefly analyzed.
同时 ,对 Mg SO4在高压氧化锌压敏电阻器陶瓷中的存在形式和显微结构以及对 Zn O晶界势垒的影响进行了简要分析。
补充资料：pn结势垒（barrierofp-njunction）
pn结势垒（barrierofp-njunction）
pn结的空间电荷区中，存在由n边指向p边的自建电场。因此，自然形成n区高于p区的电势差Vd。相应的电子势能之差即能带的弯曲量qVd称为pn结的势垒高度。pn结的p区和n区的多数载流子运动时必须越过势垒才能到达对方区域，载流子的能量低于势垒高度，就被势垒阻挡而不能前进，这个垫垒叫做pn结势垒。pn结的势垒高度与两边半导体中的杂质浓度及其分布、温度以及半导体材料的禁带宽度Eg有关。除pn结势垒外，还有金属与半导体接触的接触势垒（肖特基势垒）、半导体表面形成的表面势垒等。势垒高度受外加电场的影响，当外加电场削弱势垒区中电场时，势垒降低，载流子容易通过；外加电场加强势垒区的电场时，势垒高度升高，载流子不易通过。利用pn结势垒这一特性可制成整流、检波等多种半导体器件。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条