1) Impregnation promoted by supported salt
载体盐助分散浸渍法
2) Promoted impregnation by support salt
载体盐助分散浸渍
3) ultrasonic dispersion dipping
超声分散浸渍法
1.
Gas_sensing material of semiconductor doped SO~(2-)_4 in In_2O_3 was prepared by ultrasonic dispersion dipping and the effect of SO~(2-)_4 doping on the conductivity and gas_sensing properties was investigated.
用超声分散浸渍法制备了掺杂SO2-4的In2O3半导体气敏材料,并对其电导和气敏性能进行了研究。
2.
Gas-sensing material of semiconductor doped SO42- in In2O3 was prepared by ultrasonic dispersion dipping and the effect of SO42- doping on the conductivity and gas-sensing properties was investigated.
用超声分散浸渍法制备了掺杂SO42-的In2O3半导体气敏材料,并对其电导和气敏性能进行了研究。
4) melt-impregnation method
熔盐浸渍法
1.
Performance and synthesis of Li_xMnO_2 with melt-impregnation method;
Li_xMnO_2的熔盐浸渍法合成和性能
5) precursor impregnation procedure
前体浸渍法
1.
Synthesis of copper-containing mesoporous MSU-s by precursor impregnation procedure;
前体浸渍法制备含铜的介孔材料Cu/MSU-s
补充资料：熔盐电解法生产铌粉(见熔盐电解法生产钽粉)
熔盐电解法生产铌粉(见熔盐电解法生产钽粉)
production of niobium powder by molten salt electrolysis
rongyand+onjlefa ShengChan n.fen熔盐电解法生产妮粉(produetion。fn;obi-um powder by molten salt eleetrolysls)见熔盐电解法生产担粉。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条