1) phase transition induced electron emission
相变致电子发射
1.
Study of phase transition induced electron emission from NBT based ceramics;
NBT基陶瓷中相变致电子发射的研究(英文)
2) IR emissivity control
电致变发射率
1.
Aiming at the threat of IR imaging guiding weapons to targets and the deficiency of the traditional camouflage equipments,the method of adopting dynamic temperature control technology and dynamic IR emissivity control technology to change the camouflage′s thermal imagery dynamically,making covering targets from being detected and tracked by IR imaging system possible is proposed.
针对红外成像导弹对目标构成的重大威胁和传统伪装器材在防护目标方面的不足,提出了通过动态改变伪装器材的表面温度和红外发射率来改变目标红外热图像、躲避红外成像系统探测与跟踪的技术思路,阐述了电致变温器件和电致变红外发射率器件的工作原理和制备技术,设计了一种基于电致变温器件和电致变发射率器件的红外动态变形伪装系统,描述了系统的工作原理,并给出了该系统的红外动态变形效果图。
2.
The principle and the structure of temperature control device and semiconductor IR emissivity control device are introduced.
本文介绍了电致变发射率和半导体电致变温的基本原理和器件结构,具体分析了晶态氧化钨薄膜、聚苯胺薄膜和半导体等作为电致变发射率材料的特点,提出了一种目标红外辐射控制系统原理, 为实现目标红外辐射与背景红外辐射的融合、降低目标的可检测性理清了思路。
3) field emission
场致电子发射
1.
The field emission properties were tested by using a diode structure in a vacuum chamber.
测试了类球状微米金刚石聚晶膜的场致电子发射特性。
2.
The field emission cathode was fabricated with a simple screen printing method.
采用丝网印刷方法将其制备为场致电子发射阴极,将阴极与印刷有荧光粉的阳极板组装成二极结构场致发射显示屏,并进行了场致电子发射特性对比实验。
3.
Recently, a number of experiments and theoretical researches have showed that diamond thin films，especially nanocrystalline diamond thin films, could emit electrons at very low fields, and be well suited for field emission cold cathode which is applied in many field emission applications, such as microwave vacuum devices and field emission displays.
近年来 ，国内外不断有实验和理论研究表明，金刚石薄膜特别是纳米晶金刚石薄膜，在低的开启电压作用下，即可获得很高的场致发射电流密度，具有十分优秀的场致电子发射特性，是一种理想的场致发射阴极材料。
4) field electron emission
场致电子发射
1.
Fullerene-like nano-crystalline CN_x films and its characteristics of field electron emission;
类富勒烯纳米晶CN_x薄膜及其场致电子发射特性
2.
The graphite-like film was prepared on silicon substrate by pulsed laser ablation, and the field electron emission from the film was measured.
利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜,以该薄膜为阴极进行了场致电子发射实验。
3.
Prebreakdown was observed under field electron emission experiments from amorphous carbon-polyimide films which were firstly deposited on silicon substrate with high electrical conductivity by pulse laser deposition.
利用脉冲激光沉积技术（ＰｕｌｓｅｄＬａｓｅｒＤｅｐｏｓｉｔｉｏｎ）首次制备出非晶碳－聚酰亚胺复合薄膜，用其做为冷阴极，观察到其场致电子发射的预击穿现象，预击穿后阈值场强为７Ｖ／μｍ，最大发射电流密度为１。
6) thermionic field emission
热电子场致发射
1.
Based on thermionic field emission,this paper presents an analytical model by approximating the physical model which shows good agreement with experimental data over a wide range of gate bias and of temperature.
本文以陷阱辅助热电子场致发射理论为基础,通过对物理模型的近似处理,提出了一个在大的栅压范围和温度范围内与实验数据吻合较好的多晶硅薄膜晶体管泄漏电流解析模型。
补充资料：致电离和非致电离
分子式：
CAS号：
性质：从剂量学的角度看，辐射可分为致电离和非致电离两种。致电离辐射可以是荷电粒子也可以是非荷电粒子，前者可直接使原子、分子电离或通过次级电子而间接电离；后者则主要通过光电效应、康普顿散射等过程间接电离。非致电离辐射包括低能电磁辐射(波长从红外到紫外之间)和微粒束(原子或分子束)，它们不能使物质分子电离，却可传其能量使之激发。
CAS号：
性质：从剂量学的角度看，辐射可分为致电离和非致电离两种。致电离辐射可以是荷电粒子也可以是非荷电粒子，前者可直接使原子、分子电离或通过次级电子而间接电离；后者则主要通过光电效应、康普顿散射等过程间接电离。非致电离辐射包括低能电磁辐射(波长从红外到紫外之间)和微粒束(原子或分子束)，它们不能使物质分子电离，却可传其能量使之激发。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条