1) β Si 3N 4 single crystal particles
β-Si3N4单晶
2) β-Si3N4 grains
β-Si3N4晶粒
1.
The results reveal that the diameter and aspect ratio of elongated β-Si3N4 grains in the composites decrease with increasing h-BN content.
结果表明:随着h-BN含量增加,柱状β-Si3N4晶粒的直径和长径比均下降;未加h-BN时,β-Si3N4陶瓷以沿晶断裂为主,添加体积含量为6%和8%的h-BN后,复合材料出现明显的沿晶和穿晶断裂,而添加10%h-BN的陶瓷复合材料则以沿晶断裂为主。
3) β-Si3N4 rod crystals
β-Si3N4棒晶
1.
In this paper, the effects of seeding β-Si3N4 rod crystals prepared by self-propagating high-temperature synthesis on the mechanical properties of silicon nitride ceramic were investigated.
与不加棒晶相比,加入8wt％的β-Si3N4棒晶可使陶瓷的韧性从4。
4) β-Si_3N_4
β-Si3N4
1.
Both unit cell parameters and fractional atomic coordinates of β-Si_3N_4 have been fully relaxed using Crysta106 program that adopts all-electron gauss-type basis sets and the density functional theory (PW91 and B3LYP).
分别用PW91,B3LYP两种密度泛函方法和全电子高斯基组对β-Si3N4的几何结构进行全优化(包括晶格参数和原子坐标),结果和实验值符合良好。
5) β-Ga_2O_3 single crystal
β-Ga2O3单晶
1.
β-Ga_2O_3 single crystals,the wide band gap semiconductor,were grown using floating zone technique.
-βGa2O3单晶的荧光谱不仅观察到了3个特征峰:紫外光(395nm)、蓝光(471nm)、绿光(559nm),还观察到了在277和297nm的紫外光和692nm的红光荧光发射。
6) β-FeSi_2 single crystals
β-FeSi_2单晶
1.
Crystal growth technology and crystal structure of high quality β-FeSi_2 single crystals grown from vapor by employing chemical vapor transport technique and its phase transition under high pressure were studied.
本论文对闭管化学气相生长高质量β-FeSi_2单晶的工艺条件、β-FeSi_2单晶的晶体结构及其高压相演化进行了深入研究。
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条