It is discovered that a subgrain Al layer is usually observed at the Al side of a SiC/Al interface; the layer is less than 1μm thick and a few degrees crystallographically misoriented from the Al matrix, with high density of dislocation generated in it Its formation might be attributed to the localized strain caused by the difference between SiC and Al in thermal expansion coefficien

A “subgrain Al layer” was usually observed at the Al side of a SiC/Al interface, which was less than 1μm thick with high density of dislocation generated in it.

Semi-solid slurry of hypoeutectic Al-Si alloy was prepared by the means of low temperature pouring,and the morphology of semi-solid primary phase and its fractal dimension as well as the corresponding computation were researched.

The Al-based amorphous ribbons Al_(80)Ni_(15-x)Y_2Zr_3Cu_x (x=1,3,4,6,7,9) are prepared by melt-spinning method.

Greenization Planning on the Hypoeutectic Cast Al-Si Alloys;

Characteristics and Hereditary Harm of the Surface Inclusion in Cast rolling Aluminum Strip;

the impact of the undercooling triggered by cooling and the casting speed to aluminum strip in the casting process was simulated.

The characteristic of the continuous casting technology of aluminium strip and the key problem in the continuous casting process were introduced .