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1)  Fermi energy
费密能量
1.
On the relation between Fermi energy of low-dimensional electron gas and temperature;
低维电子气的费密能量与温度的关系
2)  Fermi level
费密能级
1.
An example Si-doped GaAs(T=300 K)was given,the doping concentration and Fermi level was calculated by Fermi integral accurate value and Boltzmann distribution,the results show that when Nd<1.
4%;最后以GaAs掺Si(300K)为例,应用费密积分值计算出掺杂浓度与费密能级关系,与玻耳兹曼分布作了比较。
3)  fermi energy
费密能
4)  quasi-Fermi level
准费密能级
5)  Fermi level diagram
费密能级图
6)  Fermi energy
费米能量
1.
A model of three-dimensional asymmetric square potential well is given, and some properties of the two-dimensional electron gas in semiconductor quantum well are studied the quantum energy level and Fermi energy are obtained, and discussed.
利用提出的三维不对称方势阱模型,对半导体量子阱中二维电子气的性质进行了研究,确定其量子能级和费米能量,并对有关结果进行了讨论。
补充资料:费密能量
      见费密面。
  

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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