1) return loss
反射损耗
1.
Simulated by Coventor and HFSS,the switch results in a pull-in voltage less than 20 V,insertion loss less than 01 dB,return loss less than -25 dB at X band,and isolation better th.
介绍了一种带直流驱动电极交直流分离的MEMS开关,研究了影响开关阈值电压的因素,运用缩腰设计、尺寸优化等方法降低开关的阈值电压;运用阻抗匹配方法降低开关的反射损耗;利用等效电感的设计提高所需频段的隔离度。
2.
Its coupling is-20±2 dB,the isolation is-35 dB typically and the return loss is less than-20 dB.
76mm,耦合度-20±2dB,隔离度-35dB,反射损耗小于-20dB。
3.
In addition, the relation between via holes diameter and return loss is emonstrated.
针对平行带状线间的耦合问题,比较了平行带状线间不加孔栅和加孔栅的耦合干扰问题,研究了平行带状线间距不同时加不同孔栅结构的抗耦合干扰情况,分析了孔径与反射损耗的关系。
2) reflection loss
反射损耗
1.
The Lichtenecher formula is used to culculate the electromagnetic parameters of radar absorbing coatings which are respectively made up of some adhesive and various radar-absorbing ingredients,the reflection loss formula (RLF) applicable to the homogeneous radar absorbing coatings is deduced according to the electromagnetic theory.
本文利用Lichtenecker性能加和公式对涂层的等效电磁参数进行了模 拟计算和分析，并根据电磁理论详细推导了涂层的反射损耗与其等效电磁参 数之间的关系，建立了由胶粘剂和不同种类、不同体积分数的吸收剂组成的 多层吸波涂层的吸波模型，并通过实验验证了该吸波模型的合理性。
2.
The paper puts emphasis on via s influence on signal reflection loss, and tries to give the optimum size of the via with numerical analysis and simulation method.
本文介绍了过孔的模型,采用软件HFSS对多层印刷电路板上的过孔设计进行仿真,通过仿真的方法找到过孔尺寸对反射损耗的影响规律,从而求出最佳的过孔尺寸,仿真结果对于高速PCB电路板设计具有实际指导作用。
3.
The results show that the effect of these factors on the reflection loss are in the following order, from strong to weak, milling time, particle size and mass fraction of the absorber.
结果表明:在设计范围内,各因素对吸波材料反射损耗的影响顺序从大到小为:球磨时间、粒径和质量分数;获得的最佳工艺条件:球磨时间为15h、吸收剂粒径小于48μm及其质量分数为75%,从而实现了对吸波材料性能的优化设计。
3) low return loss
低反射损耗
4) reflection loss of light
光反射损耗
5) loss at total reflection
全反射损耗
6) loss of reflected routing
反射路径损耗
1.
In this paper, the factors, including loss of reflected routing, performance of R.
文章从反射路径损耗、吸波材料性能、天线波束宽度等三个方面分析了影响暗室静区性能的因素,给出了暗室静度计算模型,较全面地考虑了影响暗室静区静度的各项因素,能够为暗室设计者提供科学的指导。
补充资料：介质损耗角正切试验(见电容率与损耗因数试验)
介质损耗角正切试验(见电容率与损耗因数试验)
dielectric loss tangent test
)!eZh.sunhooJ一002匕engq一e sh一yon介质损耗角正切试验(dieleetri。1055 tangenttest)见电容率与损耗因数试验。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条