1) spreading resistance
扩展电阻
1.
In this paper, the regularity of the changed dosage and the depth of strain, the injury layer, the spreading resistance when N~(+)and N~+_2 were pouring into Si, were investigated.
本文应用X射线衍射方法、红外光谱分析方法、扩展电阻测量方法研究了N+和N+2注入硅的应变、损伤度、扩展电阻率随注入剂量、注入深度变化的规律,形成Si3N4非晶层的条件。
2.
the sensing principle of the silicon spreading resistance temperature sensor (SRT) has been investigated.
阐述了一种结构特别的硅扩展电阻式元件的温度敏感原理，提出了物理模型，探讨了其工作温区拓宽机理。
3.
A novel integrated spreading resistance silicon flow (SRSF) sensor is presented.
提出了一种新型集成扩展电阻硅流量（ＳＲＳＦ）传感器。
2) Spreading resistance technique
扩展电阻技术
1.
Application Study of Spreading Resistance Technique on Silicon and Silica base Material;
扩展电阻技术在硅、硅基材料测试中的应用
3) base spreading resistance
基区扩展电阻
4) base spreading resistance
基极扩展电阻
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条