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1)  chemical state of silicon
Si化学状态
2)  chemical states
化学状态
1.
The chemical states of Ni and Al in the depth of samples heat_treated were analyzed using XPS with Ar + ionic in_situ etching.
对用射频磁控溅射法形成的单晶及多晶Al2 O3与Ni界面的化学状态进行研究 。
2.
The crystal structures,chemical states and electrical transport behavior of the samples were studied,and the DC conductivity of the Eu_(1-x)Sr_xCoO_(3-δ) at different temperatures has been tested.
研究了各样品的晶体结构、化学状态和电输运性能,测试了样品在不同温度下的直流电导率。
3)  chemical state
化学状态
1.
In this study, the changes in reflection spectrum and lattice constant of Mn-Al 2O 3 pink pigment as a result of addition of Cr 2O 3 were observed by measuring the reflection spectrum f (R), lattice constant, electron spin resonance (ESR) and calculating the lattice constant, based on which the solid solubility and the chemical state of coloring ion Mn were deduced.
本实验选择Mn -Al2 O3色料 ,给其中加入Cr2 O3,通过测定反射光谱f(R)、晶格常数、电子自旋共振 (ESR) ,并计算晶格常数 ,分别得到加入Cr2 O3前后的Mn -Al2 O3的反射光谱与晶格常数的变化 ,依据该数据来推定着色离子Mn的固溶量及化学状态 。
2.
The chemical states of both the original surface of SiC particles and the interface of SiCP/Al composite made by powder metallurgy were investigated by means of XPS and AES.
本文采用X射线光电子谱(XPS)和俄歇能谱技术(AES)对原始SiC颗粒表面和粉末冶金法制备的SiCP/Al复合材料界面的化学状态进行了研究。
3.
The results indicate that the concentration of P is less, the P atoms at grain boundaries are solid solution state and the influnce of Ce on the chemical state of P at grain boundaries is very small.
结果表明:当晶界P偏聚浓度较低,并以固溶态存在时,Ce对P的化学状态影响较小;当P的晶界浓度较高时,并以不同的化学状态存在时,Ce的影响较大,较多的Ce会改变P的化学状态。
4)  Electrochemical state
电化学状态
5)  chemical state of sulfur
硫化学状态
6)  iron chemical forms
铁化学状态
补充资料:化学平衡状态

在一定条件下的可逆反应里,正反应和逆反应的速度相等,反应混合物中各组成成分的百分含量保持不变的状态。对化学平衡状态的理解,可用“逆”、“等”、“定”、“同”、“变”等5个字加以概括。逆:指化学平衡的研究对象是可逆反应。等:指正、逆反应速度相等,表明化学平衡是一种动态平衡,反应并没有停止。定:指反应混合物中各组成成分的百分含量一定,它是正、逆反应速度相等的必然结果。同:指在相同条件下,可逆反应不论从正反应开始进行还是从逆反应开始进行,可达同一平衡状态。变:指外界条件改变时,平衡状态可能发生改变,即平衡发生移动。

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