1) ZnO quantum wire
ZnO量子线
1.
BaTiO_3/SrTiO_3 artificial superlattices deposited by pulsed laser molecular-beam epitaxy, high UV reflecting Cu/Ti superlattices fabricated by DC magnetron sputtering and ZnO quantum wires made by hydrothermal technique are introduced in this paper.
主要论述了低维材料的制造方法、特异性能及在光电子和微电子器件领域的应用,包括介质超晶格、金属超晶格和一维量子线;介绍了我们分别采用激光分子束外延制备的BaTiO_3/SrTiO_3介质超晶格及其介电性能、直流磁控溅射法制备的强紫外光反射的Cu/Ti超晶格和宽禁带的一维ZnO量子线;描述了低维材料的发展前景。
2) ZnO quantum dot
ZnO量子点
1.
Fabrication of Hexagonal ZnO Quantum Dot in Cubic ZnMgO Matrix by Chemical Solution Method;
立方ZnMgO基体中六方ZnO量子点的化学溶液制备技术
2.
The results show that ZnO quantum dots have the best luminescence properties at n∶nZnO=1∶4.
本文利用溶胶-凝胶法在非水稀溶液中制备出SiO2包覆的ZnO量子点。
3.
ZnO quantum dots has unique photoelectric properties,especially can be used in UV laser devices related with the exciton characteristic,therefore, it is very important to study the ground state properties of exciton of ZnO quantum dots in theory.
ZnO半导体量子点材料与体材料相比具有崭新的光电特性,特别在紫外激光器件方面,与ZnO的激子特性密切相关,因此理论上对ZnO量子点中激子的基态特性进行研究就显得十分必要。
3) ZnO/MgZnO quantum well
ZnO/MgZnO量子阱
4) multi-quantum wells
ZnO/ZnMgO多量子阱
5) ZnO/MgO multiple quantum wells
ZnO/MgO多量子阱
6) ZnO nanowires
ZnO纳米线
1.
Field emission of MWCNT/ZnO nanowires composite film cathode;
MWCNT/ZnO纳米线复合阴极薄膜的场发射特性
2.
The growth of ZnO nanowires under electric field and field emission property;
ZnO纳米线在外加电场下的生长及场发射性能
3.
Study on the gas sensitivity property to alcohol of Ag doped ZnO nanowires;
Ag掺杂ZnO纳米线酒敏性能的研究
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条