1) Si/Si
Si/Si
2) Si/Si direct bonding
Si/Si直接键合
1.
A physical model of the interfacial stresses of Si/Si direct bonding was presented based on the Suhire theory of stresses presented in bimetal strips,and the analytical equations of the normal stresses,the shearing stresses and the peeling stresses were derived according to the stress model.
根据Suhir的双金属带的热应力分布理论,建立了Si/Si直接键合界面应力模型,推导出了由于高温引起的正应力、剪切应力和剥离应力的解析方程。
3) a-Si/a-Si tandem solar cells
非晶/非晶叠层太阳电池
4) Si/Si low temperature direct bonding technology
硅/硅低温键合技术
5) Si/Si_ 1-xGe_x resonant tunneling diode
Si/Si1-xGex共振隧穿二极管
6) Si/Si_(1-x)Ge_x HEMT
Si/Si_（1-x）Ge_xHEMT
补充资料：silicic acid (h2si2o5), disodium salt
CAS：13870-28-5
分子式：H2O5Si2·2Na
中文名称：原硅酸钠
英文名称：Sodium orthosilicate；Silicic acid, disodium salt；silicic acid (h2si2o5), disodium salt
分子式：H2O5Si2·2Na
中文名称：原硅酸钠
英文名称：Sodium orthosilicate；Silicic acid, disodium salt；silicic acid (h2si2o5), disodium salt
说明：补充资料仅用于学习参考，请勿用于其它任何用途。