1) strained-layer superlattice
应变层超晶格
1.
The interface structure of InAs/GaInSb strained-layer superlattice;
InAs/GaInSb应变层超晶格材料的界面结构
2.
The electronic structures of the(GaN)_n/(AlN)_n strained-layer superlattice under free-standing conditions are calculated with the recursion method.
以FreeStanding条件生长的超晶格原胞为计算模型,运用LCAORecursion方法研究了(GaN)n/(AlN)n(001)应变层超晶格的电子结构。
3.
X-ray diffraction curves of Ⅱ-Ⅵ compound strained-layer superlattice grown by metal organic chemical vapor deposition (MOCVD) were measured by using computercontroled X-ray diffractometer.
本文报导了用计算机控制的衍射仪（ＣｕＫα辐射）测量的金属有机化学汽相沉淀（ＭＯＣＶＤ）方法生长的Ⅱ－Ⅵ族应变层超晶格的Ｘ射线衍射曲线，观察到了超晶格结构的多级卫星峰，且卫星峰的强度随角度呈周期性变化。
2) strained layer superlattice(SLS)
应变层超晶格(SLS)
3) strained superlattices
应变超晶格
1.
The electronic band Structures of strained strained GaAs layers grown on GexSi1-x alloys in (001) plane and strained superlattices(Si2)4/(GaAs)4 grown on Si substrates in (001)plane are calculated in tight-binding frame.
采用紧束缚方法计算了生长在ＧｅｘＳｉ１－ｘ合金（００１）面上的应变ＧａＡｓ层以及生长在Ｓｉ（００１）面上的应变超晶格（Ｓｉ２）４／（ＧａＡｓ）４的电子能带结构。
4) strained-layer superlattice
应变超晶格
1.
The GexSi(1-x)/Si strained-layer superlattices avalanche photodetector has been studied and optimum designed.
对GexSi(1-x)／Si应变超晶格雪崩光电探测器进行了分析与优化设计。
2.
The present paper cover the conditions for the growth of InGaAs/GaAs andInGaAs/InP strained-layer superlattices by low pressure metalorganic vapor pliase epitaxy.
本文探讨了ＬＰ－ＭＯＶＰＥ法在ＧａＡｓ和ＩｎＰ衬底上生长２１个周期的ＩｎＧａＡｓ／ＧａＡｓ和２０个周期的ＩｎＧａＡｓ／ＩｎＰ两种应变超晶格的条件，并用Ｘ射线衍射分析了这两种应变超晶格，分析观察到三级卫星峰和六级卫星峰。
3.
The X-ray diffraction (XRD) method was used in the investigation of the structure of (GdTe-ZnTe)/ZnTe /GaAs(100) strained-layer superlattice.
用X射线衍射,并结合X射线动力学衍射理论模型的计算机模拟方法,对(CdTe-ZnTe)/ZnTe/GaAs(100)应变超晶格材料的结构进行了研究,得到了其结构参数和信息。
5) ZnSe/ZnCdSe strainedsuperlattices
Znse/ZnCdse应变超晶格
6) InGaP/InP SLSs
InGaP/InP应变超晶格
补充资料：A和B交替生长的超晶格结构
A和B交替生长的超晶格结构
A和B交替生长的超晶格结构层厚：黑2帆A 白30A B中周科学院十导体研究所供稿
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条