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1)  imprint lithography
压印光刻
1.
Study on mold fidelity for IC imprint lithography;
集成电路压印光刻中压印模具的保真度研究
2.
In the nanoimprint lithography process, a mathematical equation is formulated to demonstrate the relationship of the residual resist thickness and the pressing force during pressing the template toward the resist-coated wafer.
从理论上建立了压印光刻工艺中留膜厚度与压印力的关系,为压印预设曲线的建立提供了理论依据。
3.
Asymmetric resist profile induced by spin coating and polymerization of resist with anomalous profile in exposure process are main problems in imprint lithography alignment.
针对高速旋涂造成标记区阻蚀胶薄膜覆盖不对称和压印曝光造成标记区薄膜聚合的问题,利用压印光刻压印曝光固化脱模的工艺原理,提出了用压印预处理标记表面薄膜来优化阻蚀胶层厚度和形貌的工艺方法。
2)  hot embossing lithography
热压印光刻
1.
Aiming at the lost accuracy happened in HEL(hot embossing lithography) because of thermal distortion ,room-temperature imprint lithography is proposed.
针对热压印光刻工艺中因热变形而导致精度丧失的问题 ,提出了冷压印光刻
3)  room temperature imprint lithography
冷压印光刻
1.
The room temperature imprint lithography has overcome many difficulties appeared in HEL and has high resolution.
针对热压印光刻工艺中因热变形而导致精度丧失的问题 ,提出了冷压印光刻
4)  nanoimprint lithography
纳米压印光刻
1.
Research on Principle and Process Control of Nanoimprint Lithography;
纳米压印光刻技术原理与实验研究
2.
This paper presented a method for manufacturing nano-structure-nanoimprint lithography.
研究了一种新型的纳米结构制作方法———纳米压印光刻技术 。
3.
By comparison with conventional lithography, the resolution of nanoimprint lithography (NIL) is independent on many factors that restrict the resolution of conventional lithography, such as wave diffraction and scattering, so it can break the resolution limit of conventional photolithography, and therefore it has been recognized as one potential approach to fabricate sub-.
与传统光刻相比,纳米压印光刻的分辨率不受光的衍射和散射等因素的限制,可突破传统光刻工艺的分辨率极限,因而被认为是一种获得100nm以下图案较好的下一代方法。
5)  Nanoimprint Lithography
纳米压印光刻技术
1.
T he principles,advantages,disadvantages and R&D of Extreme Ultraviolet Lithograph y(EUVL),Immersion Lithography,Nanoimprint Lithography and Maskless Lithography(M L2)are stressed,and the prospects of them are described.
介绍了下一代光刻技术的演变,重点描述了浸没式光刻技术、极端远紫外光刻技术、纳米压印光刻技术和无掩模光刻技术的基本原理、技术优势、技术难点以及研发,并展望了这几种光刻技术的前景。
6)  marking press
压印机,刻印机,压痕机
补充资料:冲击波超压与动压

[解释]:  核爆炸产生的高温、高压火球膨胀,在周围介质中形成连续向外传播的压力脉冲(或冲击波),冲击波阵面传播到空间某点时,超过周围环境大器的压力称超压;空气粒子高速随波阵面运动产生的冲击压力称动压。超压和动压都以帕斯卡(Pa)为主单位。超压随时间的变化取决于爆炸威力、距爆点的距离和爆心周围的介质情况。特定地点的峰值超压一般出现在冲击波阵面到达该点的瞬间,超压在该点的持续时间称为正压作用时间。尔后,该点的压力下降到低于周围压力,称为负压,再逐渐回升到周围压力值。对人员的直接冲击伤,超压为20—29千帕可引器轻度伤;29—59千帕可导致中度伤;59—98千帕可造成重度伤;大于98千帕可造成极重度伤。动压为10—20千帕可造成中度伤;20—39千帕可造成重度伤;大于39千帕可造成极重度伤。动压的推动、抛掷和超压的挤压会造成物体变形和毁坏。
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