1) surface charged nanofiltration membrane
表面荷电纳滤膜
2) Charged Nanofiltration membrane
荷电纳滤膜
1.
The charged nanofiltration membrane was polymerization with a mixture of 2,5-diaminobenzene sulphonic acid(DIA) and polyethylene imine(PEI) as one monomer of interfacial polymerization(IP) reaction,trimesoyl chloride(TMC) as another monomer,n-hexane and water as solvents for TMC and DIA,respectively.
以2,5-二氨基苯磺酸(D IA)和聚乙烯亚胺(PEI)的混合溶液为无机相反应单体,以均苯三甲酰氯(TMC)为有机相单体,以水和正己烷分别作为两相溶剂,通过界面聚合技术制备复合荷电纳滤膜。
2.
A hydrophilic positively charged nanofiltration membrane was prepared by UV irradiation graft polymerization of diallydimethyl ammonium chloride(DADMAC) onto the surface of ultrafiltration mem-branes made of polyetherketone cardo(PEK-C).
表明静电效应在荷电纳滤膜的分离过程中起了重要的作用。
3) charged nanofiltration membranes
荷正电纳滤膜
1.
The charged nanofiltration membranes were prepared by ultraviolet irradiation modification with poly-acrylonitrile (PAN)membranes as the matrix.
在制备一种荷正电纳滤膜的基础上研究了制备过程影响成膜性能的几个因素,并探讨了该纳滤膜对化机浆混合废水的纳滤效果。
4) membrane surface charge
膜表面电荷
5) positively charged composite nanofiltration membrane
荷正电复合纳滤膜
1.
A novel positively charged composite nanofiltration membrane was prepared by coating the casting solution of 2-hydroxypropyltrimethyl ammonium chloride chitosan(HACC) on polysulfone ultrafiltration membrane and cross-linking with epichlorohydrin.
将2-羟丙基三甲基氯化铵壳聚糖(HACC)的铸膜液与聚砜超滤膜进行复合,用环氧氯丙烷(ECH)交联,制备了一种新型荷正电复合纳滤膜。
6) surface charge
表面电荷
1.
Effects of pretreatment of chrysotile by three compounds on the crystal lattice structure and the surface charge of chrysotile;
三种化合物浸泡处理对石棉晶格结构和表面电荷的影响
2.
Effect of electret on cell growth and surface charge in fibroblast cells;
驻极体对成纤维细胞生长和表面电荷的影响(英文)
3.
Experimental study on surface charge properties of sediment particles and their effect on dry-bulk density;
泥沙颗粒表面电荷特性及其对干容重影响试验研究
补充资料：电纳
电纳
Susceptance
电纳(suseeptanee)电纳是指电路中用复数表示而由下式定义的导Y二G士jB(1)的虚数部分。这里G是实部，称为电导，而B就是电纳。因为Y~1/2~l/(R十jX)，其中X为总电抗，即X:一X。，而R为电阻，于是下式成立: R .X尺，+x，一j厕干叉2’(2)因而电纳为B一X/(尸+XZ)。这就是关于电纳的一般表示式，表明电纳是一个依赖于电阻和电抗的函数。 如果电阻可以忽略.则B一X/x，二1/x，也即电抗的倒数。这称为简单电纳，它只有在阻抗中不含电阻时才是正确的。对于简单电纳，有 感性电纳:1/jX:二一jBL姆〔欧]，(3) 容性电纳:1/(一jX。)~jBc姆〔欧〕。 这些函数主要用于并联电路的计算中。参阅“导纳”(admittanee)条。 [罗伯逊(B.L.Robertson)撰]
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条