1) Substrate temperature
基体温度
1.
The influences of many factors on substrate temperature have been studied in detail during arc ion plating (AIP) in this paper.
采用该计算模型分析了基体材质、形状与电弧离子镀膜工艺参数改变时基体温度的变化 ,经实验验证 ,模型计算与实验数据基本吻合。
2.
The film properties can be improved by elevating substrate temperature(t_s).
提高基体温度ts可以改善薄膜的性能,在ts为200℃时,ITO薄膜的TVIL达到90%以上(含玻璃基体),方阻为13。
3.
Al2O3 films were deposited by magnetron sputtering on PET flexible substrate,and the effects of ion etching,bias voltage,and sputtering power on substrate temperature were studied.
研究了在柔性基体PET上磁控溅射氧化铝薄膜的过程中,离子刻蚀、负偏压和溅射功率对基体温度的影响,结果表明3个参数都对基体温度产生影响,为了防止PET的受热变形,离子刻蚀功率应控制在500W以下,负偏压应控制在200V以下,溅射功率应低于1000W。
2) Substrate Temperature Calculation
基体温度计算
3) substrate temperature
基板温度
1.
Effect of substrate temperature on the structure and properties of SnO_2∶Sb films;
基板温度对SnO_2:Sb薄膜结构和性能的影响
2.
The influence of substrate temperature,substrate conveying speed and the flow rate of N2 on the structure and properties of the films was investigated.
研究了基板温度、基板输送速度和氮气流量对ATO薄膜结构和性能的影响。
3.
Kinetic Monte Carlo method was applied to simulate the relationship between substrate temperature and the microstructure of the thin film fabricated by means of physical vapor deposition(PVD),and its surface topography was studied by fractal theory.
采用动态蒙特卡罗(KMC)方法研究物理气相沉积(PVD)制备薄膜过程中基板温度对薄膜微观结构的影响,并用分维理论研究薄膜表面的复杂程度。
4) substrate temperature
基片温度
1.
Effect of substrate temperature on electrical characteristic of α-C:H films;
基片温度对含氢非晶碳膜电学特性的影响
2.
Influence of substrate temperature on properties of ZnS films prepared by electron-beam evaporation
基片温度对电子束蒸发的ZnS薄膜性能的影响
3.
TiO2-CeO2 films were deposited on soda-lime glass substrates at different substrate temperatures (Ts: room temperature, 160℃ and 220℃) by R.
8Pa不变,玻璃基片温度从室温(RT)~220℃之间变化。
5) substrate temperature
基底温度
1.
Influence of the liquid substrate temperature on the band-shaped ordered structures in an Al film system;
液相基底温度对Al薄膜中带状有序结构的影响
2.
The influence of substrate temperature on the crystal orientation,the surface topography and conductivity of TiNx thin films were investigated.
在不同的基底温度下,采用直流磁控反应溅射法在硅基底上制备了氮化钛(TiNx)薄膜,研究了基底温度对薄膜结晶取向、表面形貌和导电性能的影响。
3.
The effect of the substrate temperature and the rest energy of incident particles on the island morphology and size at the early stage of thin film growth are studied by Monte-Carlo simulation.
利用Monte Carlo(MC)方法模拟研究了薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系。
6) furnace foundation temperature
炉基温度
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条