1) resistance between electrodes
电极间电阻
2) interelectrode resistance
极间电阻
1.
The results show that the interelectrode resistance of P-type mono-crystalline silicon will decrease as the available area of the electricity interface growing,but the current of cutting will increase,and positive polarity machining is suitable for discharge cutting P-type mono-crystalline silicon.
结果表明,进电有效接触面积越大,P型单晶硅材料的极间电阻就越小,切割电流也就越高,同时对于P型单晶硅放电切割宜采用正极性加工。
2.
The variation features of the interelectrode resistance of p-type silicon with different conduction mode were researched.
研究了不同进电方式条件下P型硅极间电阻的变化特征,并从进电有效接触面积的角度对其进行分析。
3) cathode interlayer resistance
阴极层间电阻
5) resistance between negative electrode and g
阴-栅极间电阻阻值
6) spark resistance
[电极间的]火花电阻
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条