1) ZnO varistor ceramics
ZnO压敏陶瓷
1.
A review on the effects of additives on the property of ZnO varistor ceramics;
添加剂在ZnO压敏陶瓷中作用机理的综述
2.
Atom defects and interface states in ZnO varistor ceramics;
ZnO压敏陶瓷中的原子缺陷和界面电子态研究
3.
Dielectric loss of ZnO varistor ceramics by variable temperature spectroscopy
ZnO压敏陶瓷介电损耗的温度谱研究
2) ZnO varistor
ZnO压敏陶瓷
1.
Based on the measurement of the relation between the leakage current I and absolute temperature T in commercial ZnO varistor ceramic samples,the barrier height(activation energy)was estimated in the presence of the expression of field enhanced thermal emission current and was found to be lower than barrier height on the balanced state.
通过测量商用ZnO压敏陶瓷材料的泄漏电流I与绝对温度T,并利用场助热激发电流的表达式计算了势垒高度(活化能),发现它低于平衡状态时的势垒高度。
2.
The sintering defects in ZnO varistor ceramic were studied.
研究了湿法合成ZnO压敏陶瓷材料的烧结缺陷。
3.
In this paper, the history, the characteristics and the recent technological status of the ZnO varistor wasreviewed and the evolution of it was forecast at the same time.
本文简要回顾了ZnO压敏陶瓷的历史，阐述了ZnO压敏陶瓷的特点以及当前ZnO压敏陶瓷基础性研究的现状，最后对其进展进行了展望。
3) ZnO varistors
ZnO压敏陶瓷
1.
The formula for calculating capacitance per grain boundary has been derived on the basis of microstructure of ZnO varistors.
通过实验对ZnO压敏陶瓷元件的介电特性进行了研究。
2.
The reflection spectra of ZnO varistors at different sintering temperature were investigated by simple powder reflection method.
利用简便的粉末反射光谱法,测量了不同烧结温度下ZnO压敏陶瓷的反射光谱,并对其影响机理进行了探讨。
4) ZnO varistor ceramic
ZnO压敏陶瓷
1.
Study on microstructure and electric properties of Y~(3+)-doped ZnO varistor ceramics
Y~(3+)掺杂ZnO压敏陶瓷的微结构和电性能研究
2.
Effect of Li~+ dopant on the electrical properties and energy band structure of ZnO varistor ceramics
Li~+对ZnO压敏陶瓷电性能和能带结构的影响
5) ZnOPbO varistors
ZnO-PbO压敏陶瓷
6) ZnO-V_2O_5 varistor ceramics
ZnO–V_2O_5压敏陶瓷
补充资料：负温度系数热敏电阻陶瓷(见热敏陶瓷)
负温度系数热敏电阻陶瓷(见热敏陶瓷)
thermo-sensitive ceramics with negative temperature coefficient
负温度系数热敏电阻陶瓷thermo一sensitiveeeramies with negative temperature eoeffieient在某一特定温度范围，电阻率随温度的升高而明显减小的热敏陶瓷。简称NTC陶瓷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条